Arylonium Photoacid Generators Containing Environmentally Compatible Aryloxyperfluoroalkanesulfonate Groups by Ayothi, Ramakrishnan, Yi, Cao, Heidi B., Yueh, Wang, Putna, Steve, Ober, Christopher K.

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EUV Resist Testing Status and Post Lithography LWR Reduction by Vandentop, Gilroy J., Putna, E. Steve, Leeson, Micahel J., Younkin, Todd R., Kloster, Grant M., Shah, Uday, Chandhok, Manish

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Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors by Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J, Maxey, Kirby, O'Brien, Kevin P, Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan, Oni, Adedapo, Putna, Steve, Clendenning, Scott B, Metz, Matthew, Radosavljevic, Marko, Avci, Uygar, Young, Ian A

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Ultra-High‑k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p‑Type High-Performance Transistors by Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J., Maxey, Kirby, O’Brien, Kevin P., Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa Ekin, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan, Oni, Adedapo, Putna, Steve, Clendenning, Scott B., Metz, Matthew, Radosavljevic, Marko, Avci, Uygar, Young, Ian A.

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Improvement in linewidth roughness by postprocessing by Chandhok, Manish, Frasure, Kent, Putna, E. Steve, Younkin, Todd R., Rachmady, Willy, Shah, Uday, Yueh, Wang

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