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Search Results - Puzenko, O.
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Tin doping of silicon for controlling oxygen precipitation and radiation hardness
by
CLACYS, C
,
SIMOEN, E
,
NEIMASH, V. B
,
KRAITCHINSKII, A
,
KRAS'KO, M
,
PUZENKO, O
,
BLONDEEL, A
,
CLAUWS, P
Published in
Journal of the Electrochemical Society
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Influence of Tin impurities on the generation and annealing of thermal oxygen donors in Czochralski silicon at 450°C
by
NEIMASH, V. B
,
KRAITCHINSKII, A
,
KRAS'KO, M
,
PUZENKO, O
,
CLAEYS, C
,
SIMOEN, E
,
SVENSSON, B
,
KUZNETSOV, A
Published in
Journal of the Electrochemical Society
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Deep levels in high-energy proton-irradiated tin-doped n -type Czochralski silicon
by
Simoen, E.
,
Claeys, C.
,
Neimash, V. B.
,
Kraitchinskii, A.
,
Krasko, N.
,
Puzenko, O.
,
Blondeel, A.
,
Clauws, P.
Published in
Applied physics letters
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Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon
by
Neimash, V. B.
Published in
Semiconductor physics, quantum electronics, and optoelectronics
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