Search Results - Puzzanghera, Maurizio

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  1. 1
    The Role of Defects on Forward Current in 4H-SiC p-i-n Diodes

    The Role of Defects on Forward Current in 4H-SiC p-i-n Diodes by Sozzi, Giovanna, Puzzanghera, Maurizio, Menozzi, Roberto, Nipoti, Roberta

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  2. 2
    OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area

    OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area by Sozzi, Giovanna, Puzzanghera, Maurizio, Chiorboli, Giovanni, Nipoti, Roberta

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  3. 3
    Perimeter and Area Components in the – Curves of 4H-SiC Vertical p+-i-n Diode With Al+ Ion-Implanted Emitters

    Perimeter and Area Components in the – Curves of 4H-SiC Vertical p+-i-n Diode With Al+ Ion-Implanted Emitters by Nipoti, Roberta, Puzzanghera, Maurizio, Sozzi, Giovanna, Menozzi, Roberto

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  4. 4
    Ni-Al-Ti Ohmic Contacts on 1 x 10 20 cm -3 Al + Ion Implanted 4H-SiC

    Ni-Al-Ti Ohmic Contacts on 1 x 10 20 cm -3 Al + Ion Implanted 4H-SiC by Nipoti, Roberta, Puzzanghera, Maurizio, Canino, Mariaconcetta, Sozzi, Giovanna

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  5. 5
    Ni-Al-Ti Ohmic Contacts on 1 x 1020 cm-3 Al+ Ion Implanted 4H-SiC

    Ni-Al-Ti Ohmic Contacts on 1 x 1020 cm-3 Al+ Ion Implanted 4H-SiC by Nipoti, Roberta, Puzzanghera, Maurizio, Canino, Mariaconcetta, Sozzi, Giovanna

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  6. 6
    (Invited) Thermal Stability of 1×1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C

    (Invited) Thermal Stability of 1×1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C by Nipoti, Roberta, Canino, Mariaconcetta, Puzzanghera, Maurizio, Sozzi, Giovanna

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  7. 7
    (Invited) Thermal Stability of 1×10 20 cm -3 Al + Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C

    (Invited) Thermal Stability of 1×10 20 cm -3 Al + Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C by Nipoti, Roberta, Canino, Mariaconcetta, Puzzanghera, Maurizio, Sozzi, Giovanna

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  8. 8
    Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing

    Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing by Nipoti, Roberta, Parisini, Antonella, Sozzi, Giovanna, Puzzanghera, Maurizio, Parisini, Andrea, Carnera, Alberto

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  9. 9
    (Invited) 4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950°C Temperature for Post Implantation Annealing

    (Invited) 4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950°C Temperature for Post Implantation Annealing by Nipoti, Roberta, Parisini, Antonella, Sozzi, Giovanna, Puzzanghera, Maurizio, Parisini, Andrea, Carnera, Alberto

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