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Algorithmic Read Resistance Trim for Improving Yield and Reducing Test Time in MRAM
by
Chang, Daehyun
,
Kim, Youngdae
,
Pyo, Suksoo
,
Hun, Shin
,
Lee, Daesop
,
Hwang, Sohee
,
Choi, Jaesik
,
Kim, Siwoong
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A 14.7Mb/mm2 28nm FDSOI STT-MRAM with Current Starved Read Path, 52Ω/Sigma Offset Voltage Sense Amplifier and Fully Trimmable CTAT Reference
by
Boujamaa, El Mehdi
,
Ali, Samsudeen Mohamed
,
Wandji, Steve Ngueya
,
Gourio, Alexandra
,
Pyo, Suksoo
,
Koh, Gwanhyeob
,
Song, Yoonjong
,
Song, Taejoong
,
Kye, Jongwook
,
Vial, Jean Christophe
,
Sowden, Andrew
,
Rathor, Manuj
,
Dray, Cyrille
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Resistors
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Algorithms
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Built-In Self-Test
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Circuits
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Controllability
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Current Measurement
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Density
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Electric Potential
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Emulators
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Integrated Circuits
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Magnetic Tunneling
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Memory Management
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Mram
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Rail To Rail Outputs
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Read Resistance Trim
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Resistance
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Sampling Methods
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