Multigigahertz Causal Transmission Line Modeling Methodology Using a 3-D Hemispherical Surface Roughness Approach by Hall, S., Pytel, S.G., Huray, P.G., Hua, D., Moonshiram, A., Brist, G.A., Sijercic, E.

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Statistical and transient channel modeling for crosstalk, bit error, jitter, and EMI by Barnes, G., Mellitz, R.I., Tsuk, M., Holoboff, R., Pytel, S.G.

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Physical modeling of forward conduction in IGBTs and diodes by Lu, L., Pytel, S.G., Santi, E., Bryant, A.T., Hudgins, J.L., Palmer, P.R.

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Modeling of IGBT resistive and inductive turn-on behavior by Lu, L., Pytel, S.G., Santi, E., Bryant, A.T., Hudgins, J.L., Palmer, P.R.

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New Developments in Gallium Nitride and the Impact on Power Electronics by Khan, M.A., Simin, G., Pytel, S.G., Monti, A., Santi, E., Hudgins, J.L.

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Dispersion Effects from Induced Dipoles by Huray, P.G., Pytel, S.G., Millitz, R.I., Hall, S.H.

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Analysis of copper treatments and the effects on signal propagation by Pytel, S.G., Huray, P.G., Hall, S.H., Mellitz, R.I., Brist, G.

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Dielectric modeling, characterization, and validation up to 40 GHz by Pytel, S.G., Barnes, G., Hua, D., Moonshiram, A., Brist, G., Mellitz, R.I., Hall, S.H., Huray, P.G.

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AlGaN/GaN MOSHFET integrated circuit power converter by Pytel, S.G., Lentijo, S., Koudymov, A., Rai, S., Fatima, H., Adivarahan, V., Chitnis, A., Yang, J., Hudgins, J.L., Santi, E., Monti, M., Simin, G., Khan, M.A.

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Cryogenic germanium power diode circuit simulator model including temperature dependent effects by Pytel, S.G., Hoenshei, A.S., Lu, L., Santi, E., Hudgins, J.L., Palmer, P.R.

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