Two-dimensional electron and hole gases in InxGa1−xN/AlyGa1−yN/GaN heterostructure for enhancement mode operation by Junda, Yan, Wang, Quan, Qu Shenqi, Xiao Hongling, Peng Enchao, He, Kang, Wang Cuimei, Feng, Chun, Yin Haibo, Jiang Lijuan, Li Baiquan, Wang, Zhanguo, Hou Xun

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Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1−xN/AlN)MQWs/GaN high electron mobility transistor by Li, Wei, Wang, Xiaoliang, Qu, Shenqi, Wang, Quan, Xiao, Hongling, Wang, Cuimei, Peng, Enchao, Hou, Xun, Wang, Zhanguo

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Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors by Wan, Xiaojia, Wang, Xiaoliang, Xiao, Hongling, Feng, Chun, Jiang, Lijuan, Qu, Shenqi, Wang, Zhanguo, Hou, Xun

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Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width by Peng, Enchao, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan, Qu, Shenqi, Kang, He, Hou, Xun, Wang, Zhanguo

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Numerical simulation of two-dimensional electron gas characteristics of a novel (In sub(x)Al sub(1-x) N/AlN)MQWs/GaN high electron mobility transistor by Li, Wei, Wang, Xiaoliang, Qu, Shenqi, Wang, Quan, Xiao, Hongling, Wang, Cuimei, Peng, Enchao, Hou, Xun, Wang, Zhanguo

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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes by Kang, He, Wang, Quan, Xiao, Hongling, Wang, Cuimei, Jiang, Lijuan, Feng, Chun, Chen, Hong, Yin, Haibo, Qu, Shenqi, Peng, Enchao, Gong, Jiamin, Wang, Xiaoliang, Li, Baiquan, Wang, Zhanguo, Hou, Xun

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Two-dimensional electron and hole gases in In x Ga1 − x N/Al y Ga1 − y N/GaN heterostructure for enhancement mode operation by Yan, Junda, Wang, Xiaoliang, Wang, Quan, Qu, Shenqi, Xiao, Hongling, Peng, Enchao, Kang, He, Wang, Cuimei, Feng, Chun, Yin, Haibo, Jiang, Lijuan, Li, Baiquan, Wang, Zhanguo, Hou, Xun

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Two-dimensional electron and hole gases in In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN heterostructure for enhancement mode operation by Yan, Junda, Wang, Quan, Qu, Shenqi, Xiao, Hongling, Peng, Enchao, Kang, He, Wang, Cuimei, Feng, Chun, Yin, Haibo, Jiang, Lijuan, Wang, Xiaoliang, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, P.O. Box 912, Beijing 100083, Li, Baiquan, Wang, Zhanguo, Hou, Xun

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A 4.43 TΩ ZIN 0.0128 mm2 Cascaded Instrumentation Amplifier with Input-biased Pseudo Resistor for Implantable Brain Machine Interfaces by Tang, Tao, Xu, Zhengjie, Wei, Yina, Feng, Linqing, Xu, Kedi, Yang, Dongping, Chambers, Cheney, Qu, Shenqi

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A 4.43 TΩ Z IN 0.0128 mm 2 Cascaded Instrumentation Amplifier with Input-biased Pseudo Resistor for Implantable Brain Machine Interfaces by Tang, Tao, Xu, Zhengjie, Wei, Yina, Feng, Linqing, Xu, Kedi, Yang, Dongping, Chambers, Cheney, Qu, Shenqi

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6-7 GHz Cryogenic Low-Noise mHEMT-Based Amplifier for Quantum Computing by Qu, Shenqi, Wang, Xiaochuan, Zhang, Cheng, Wang, Zili

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Autocatalytic, Brain Tumor‐Targeting Delivery of Bardoxolone Methyl Self‐Assembled Nanoparticles for Glioblastoma Treatment by Ye, Zhang, Sheu, Wendy C., Qu, Huan, Peng, Bin, Liu, Jia, Zhang, Li, Yuan, Fanen, Wei, Yuxin, Zhou, Jiangbing, Chen, Qianxue, Xiao, Xuan, Zhang, Shenqi

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Autocatalytic, Brain Tumor‐Targeting Delivery of Bardoxolone Methyl Self‐Assembled Nanoparticles for Glioblastoma Treatment by Ye, Zhang, Sheu, Wendy C., Qu, Huan, Peng, Bin, Liu, Jia, Zhang, Li, Yuan, Fanen, Wei, Yuxin, Zhou, Jiangbing, Chen, Qianxue, Xiao, Xuan, Zhang, Shenqi

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Fast patterning and dry-etch of SiNx for high resolution nanoimprint templates by 疏珍 万景 陆冰睿 谢申奇 陈宜方 屈新萍 刘冉

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Fast patterning and dry-etch of SiN x for high resolution nanoimprint templates by Zhen, Shu, Jing, Wan, Bingrui, Lu, Shenqi, Xie, Yifang, Chen, Xinping, Qu, Ran, Liu

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