NAND Flash Memory: Challenges and Opportunities by Yan Li, Quader, Khandker N.

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NAND Flash Memory: Challenges and Opportunities : Next-Generation Memory by YAN LI, QUADER, Khandker N

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Hot-carrier-reliability design rules for translating device degradation to CMOS digital circuit degradation by Quader, K.N., Peng Fang, Yue, J.T., Ko, P.K., Chenming Hu

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Hot-carrier-reliability design guidelines for CMOS logic circuits by Quader, K.N., Minami, E.R., Wei-Jen Ko, Ko, P.K., Chenming Hu

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A bidirectional NMOSFET current reduction model for simulation of hot-carrier-induced circuit degradation by Quader, K.N., Li, C.C., Tu, R., Rosenbaum, E., Ko, P.K., Chenming Hu

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286 mm super(2) 256 Mb DRAM with x 32 both-ends DQ by Watanabe, Yohji, Wong, Hing, Kirihata, Toshiaki, Kato, Daisuke, DeBrosse, John K, Hara, Takahiko, Yoshida, Munehiro, Mukai, Hideo, Quader, Khandker N, Nagai, Takeshi, Poechmueller, Peter, Pfefferl, Peter, Wordeman, Matthew R, Fujii, Shuso

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Hot-carrier-reliability of mixed analog/digital technologies by Quader, K.N., Chan, W.Y., Ko, P.K., Hu, C.

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A high-performance CMOS 70-MHz palette/DAC by Letham, L., Ahuja, B.K., Quader, K.N., Mayer, R.J., Larsen, R.E., Canepa, G.R.

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Projecting CMOS circuit hot-carrier reliability from DC device lifetime by Quader, K.N., Ko, P.K., Chenming Hu

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The effects of hot-electron degradation on analog MOSFET performance by Chung, J.E., Quader, K.N., Sodini, C.G., Ko, P.-K., Hu, C.

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A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs by Quader, K.N., Li, C., Tu, R., Rosenbaum, E., Ko, P., Hu, C.

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A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate by Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jongmin Park, Samaddar, T., Hao Thai Nguyen, Mui, M.L., Htoo, K., Kamei, T., Higashitani, M., Yero, E., Gyuwan Kwon, Kliza, P., Jun Wan, Kaneko, T., Maejima, H., Shiga, H., Hamada, M., Fujita, N., Kanebako, K., Tam, E., Koh, A., Lu, I., Kuo, C.C.-H., Pham, T., Huynh, J., Qui Nguyen, Chibvongodze, H., Watanabe, M., Oowada, K., Shah, G., Woo, B., Gao, R., Chan, J., Lan, J., Hong, P., Liping Peng, Das, D., Ghosh, D., Kalluru, V., Kulkarni, S., Cernea, R.-A., Huynh, S., Pantelakis, D., Chi-Ming Wang, Quader, K.

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128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode by Yan Li, Seungpil Lee, Oowada, K., Hao Nguyen, Qui Nguyen, Mokhlesi, N., Hsu, C., Li, J., Ramachandra, V., Kamei, T., Higashitani, M., Pham, T., Honma, M., Watanabe, Y., Ino, K., Binh Le, Byungki Woo, Khin Htoo, Tai-Yuan Tseng, Pham, L., Tsai, F., Kwang-ho Kim, Yi-Chieh Chen, Min She, Jong Yuh, Chu, A., Chen Chen, Puri, R., Hung-Szu Lin, Yi-Fang Chen, Mak, W., Huynh, J., Jim Chan, Watanabe, M., Yang, D., Shah, G., Souriraj, P., Tadepalli, D., Tenugu, S., Gao, R., Popuri, V., Azarbayjani, B., Madpur, R., Lan, J., Yero, E., Feng Pan, Hong, P., Jang Yong Kang, Moogat, F., Yupin Fong, Cernea, R., Huynh, S., Trinh, C., Mofidi, M., Shrivastava, R., Quader, K.

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A 125-mm(2) 1-Gb NAND flash memory with 10-MByte/s program speed by Imamiya, K, Nakamura, H, Himeno, T, Yarnamura, T, Ikehashi, T, Takeuchi, K, Kanda, K, Hosono, K, Futatsuyama, T, Kawai, K, Shirota, R, Arai, N, Arai, F, Hatakeyama, K, Hazama, H, Saito, M, Meguro, H, Conley, K, Quader, K

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Flash Memory at a Cross-Road: Challenges & Opportunities by Quader, K. N.

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