Search Results - Quan, Si (思全)

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  1. 1
    Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

    Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis by 全思 郝跃 马晓华 于惠游

    Published in Chinese physics B
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  2. 2
    Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

    Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment by 谢元斌 全思 马晓华 张进城 李青民 郝跃

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  3. 3
    Characterization of Al2O3/GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

    Characterization of Al2O3/GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths by Ma, Xiao-Hua (晓华 马), Pan, Cai-Yuan (才渊 潘), Yang, Li-Yuan (丽媛 杨), Yu, Hui-You (惠游 于), Yang, Ling (凌杨), Quan, Si (思全), Wang, Hao (昊王), Zhang, Jin-Cheng (进成 张), Hao, Yue (跃郝)

    Published in Chinese physics B
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  4. 4
    Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier

    Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier by Ma, Xiao-Hua (晓华 马), Yu, Hui-You (惠游 于), Quan, Si (思全), Yang, Li-Yuan (丽媛 杨), Pan, Cai-Yuan (才渊 潘), Yang, Ling (凌杨), Wang, Hao (昊王), Zhang, Jin-Cheng (进成 张), Hao, Yue (跃郝)

    Published in Chinese physics B
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  5. 5
    Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high-electron-mobility transistor

    Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high-electron-mobility transistor by Quan, Si (思全), Hao, Yue (跃郝), Ma, Xiao-Hua (晓华 马), Yu, Hui-You (惠游 于)

    Published in Chinese physics B
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  6. 6
    AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

    AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition by 毕志伟 冯倩 郝跃 王党会 马晓华 张进成 全思 许晟瑞

    Published in Chinese physics B
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  7. 7
    Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

    Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment by 全思 郝跃 马晓华 谢元斌 马骥刚

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  8. 8
    Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

    Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors by 胡贵州 杨凌 杨丽媛 全思 姜守高 马骥刚 马晓华 郝跃

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  9. 9
    Production of γγ＋2 jets from double parton scattering in proton-proton collisions at the LHC

    Production of γγ＋2 jets from double parton scattering in proton-proton collisions at the LHC by 陶军全 张思靓 沈玉乔 范嘉伟 陈国明 陈和生

    Published in Chinese physics C
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  10. 10
    西藏冻融侵蚀的分级和评价

    西藏冻融侵蚀的分级和评价 by 张建国, 刘淑珍, 杨思全

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  11. 11
    AIGaN/GaN double-channel HEMT

    AIGaN/GaN double-channel HEMT by 全思 郝跃 马晓华 郑鹏天 谢元斌

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  12. 12
    广州地区182例汉族人细胞色素P4501A1和2E1基因多态性与肺癌关系的病例对照研究

    广州地区182例汉族人细胞色素P4501A1和2E1基因多态性与肺癌关系的病例对照研究 by 王德全 陈思东 汪保国 周卫平

    Published in Zhongguo fei ai za zhi
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