High p-conductivity in AlGaN enabled by polarization field engineering by Rathkanthiwar, Shashwat, Reddy, Pramod, Moody, Baxter, Quiñones-García, Cristyan, Bagheri, Pegah, Khachariya, Dolar, Dalmau, Rafael, Mita, Seiji, Kirste, Ronny, Collazo, Ramón, Sitar, Zlatko

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High conductivity and low activation energy in p-type AlGaN by Rathkanthiwar, Shashwat, Bagheri, Pegah, Khachariya, Dolar, Mita, Seiji, Quiñones-García, Cristyan, Guan, Yan, Moody, Baxter, Reddy, Pramod, Kirste, Ronny, Collazo, Ramón, Sitar, Zlatko

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Doping and compensation in heavily Mg doped Al-rich AlGaN films by Bagheri, Pegah, Klump, Andrew, Washiyama, Shun, Hayden Breckenridge, M., Kim, Ji Hyun, Guan, Yan, Khachariya, Dolar, Quiñones-García, Cristyan, Sarkar, Biplab, Rathkanthiwar, Shashwat, Reddy, Pramod, Mita, Seiji, Kirste, Ronny, Collazo, Ramón, Sitar, Zlatko

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High electron mobility in AlN:Si by point and extended defect management by Bagheri, Pegah, Quiñones-Garcia, Cristyan, Khachariya, Dolar, Rathkanthiwar, Shashwat, Reddy, Pramod, Kirste, Ronny, Mita, Seiji, Tweedie, James, Collazo, Ramón, Sitar, Zlatko

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High conductivity in Ge-doped AlN achieved by a non-equilibrium process by Bagheri, Pegah, Quiñones-Garcia, Cristyan, Khachariya, Dolar, Loveless, James, Guan, Yan, Rathkanthiwar, Shashwat, Reddy, Pramod, Kirste, Ronny, Mita, Seiji, Tweedie, James, Collazo, Ramón, Sitar, Zlatko

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