Kinematical simulation of high-resolution x-ray diffraction curves of Ge x Si1− x /Si strained-layer superlattices: A structural assessment by Vandenberg, J. M., Bean, J. C., Hamm, R. A., Hull, R.

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Passivation of carbon doping in InGaAs during ECR-CVD of SiNx by Ren, F, Hamm, R.A, Lothian, J.R, Wilson, R.G, Pearton, S.J

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Critical layer thickness in strained Ga1− x In x As/InP quantum wells by Temkin, H., Gershoni, D. G., Chu, S. N. G., Vandenberg, J. M., Hamm, R. A., Panish, M. B.

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Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine by RITTER, PANISH, M. B, THAMM, R. A, GERSHONI, D, BRENER, I

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Formation of intermetallics and grain boundary diffusion in Cu-Al and Au-Al thin film couples by Vandenberg, J.M., Den Broeder, F.J.A., Hamm, R.A.

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Type-I to type-II superlattice transition in strained layers of In x Ga 1 − x As grown on InP by Gershoni, D., Temkin, H., Vandenberg, J. M., Chu, S. N. G., Hamm, R. A., Panish, M. B.

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An in situ X-ray study of phase formation in CuAl thin film couples by Vandenberg, J.M., Hamm, R.A.

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Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47Ino.53As by LANG, D. V, PANISH, M. B, CAPASSO, F, HAMM, R. A, SERGENT, A. M, TSANG, W. T

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PION-I. A Monte Carlo Computer Program for Calculations with Negative Pion Beams by Wright, H. A., Hamm, R. N., Turner, J. E.

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Formation of Intermetallics and Grain Boundary Diffusion in Cu--Al and Au--Al Thin Film Couples by Vandenberg, J M, den Broeder, F J A, Hamm, R A

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Erratum: Excitonic transitions in strained-layer In x Ga 1 − x As / InP quantum wells by Gershoni, D., Temkin, H., Panish, M. B., Hamm, R. A.

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Be doping of InP and GaInAs during metalorganic molecular beam epitaxy by Ritter, D., Hamm, R.A., Panish, M.B., Geva, M.

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Excitonic transitions in strained-layer In x Ga 1 − x As/InP quantum wells by Gershoni, D., Temkin, H., Panish, M. B., Hamm, R. A.

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A 28 GHz transimpedance preamplifier with inductive bandwidth enhancement by Montgomery, Feygenson, Smith, Yadvish, Hamm, Temkin

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A 144 GHz InP/InGaAs composite collector heterostructure bipolar transistor by Feygenson, Hamm, Smith, Pinto, Montgomery, Yadvish, Temkin

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Evidence for intrinsic interfacial strain in lattice-matched In x Ga 1 − x As/InP heterostructures by Vandenberg, J. M., Macrander, A. T., Hamm, R. A., Panish, M. B.

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Temperature dependence of collector breakdown voltage and output conductance in HBT's with AlGaAs, GaAs, InP, and InGaAs collectors by Malik, R.J., Feygenson, A., Ritter, D., Hamm, R.A., Panish, M.B., Nagle, J., Alavi, K., Cho, A.Y.

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Ballistic transport effects in InP/GaInAs heterostructure bipolar transistors by Reygenson, A., Menin, O.A., Smith, P.R., Hamm, R.A., Montgomery, R.K., Yadvish, R.D., Ritter, D., Haner, M.

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A DC to 20 GHz high gain monolithic InP/InGaAs HBT feedback amplifier by Montgomery, R.K., Humphrey, D.A., Smith, P.R., Jalali, B., Nottenburg, R.N., Hamm, R.A., Panish, M.P.

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Selective Growth of InP/GaInAs Heterostructures Using Metalorganic Molecular Beam Epitaxy by Wang, Y. L, Feygenson, A, Hamm, R. A, Ritter, D, Weiner, J. S

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