Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors by C.R.Abernathy, B.P.Gila, A.H.Onstine, S.J.Pearton, Jihyun Kim, B.Luo, R.Mehandru, F.Ren, J. K. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G.D. Via, A. Crespo, T.J. Jenkins, Y. Irokawa

Get full text