Search Results - Ragnarsson, Lars-Aåke

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  1. 1
    Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices

    Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices by Moonju Cho, Jae-Duk Lee, Aoulaiche, M., Kaczer, B., Roussel, P., Kauerauf, T., Degraeve, R., Franco, J., Ragnarsson, L., Groeseneken, G.

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  2. 2
    Extreme Scaled Gate Dielectrics By Using ALD HfO 2 /SrTiO 3 Composite Structures

    Extreme Scaled Gate Dielectrics By Using ALD HfO 2 /SrTiO 3 Composite Structures by Pierreux, Dieter, Machkaoutsan, Vladimir, Tois, Eva, Swerts, Johan, Schram, Tom, Adelmann, Christoph, Van Elshocht, S., Popovici, Mihaela I., Conard, Thierry, Tseng, Joshua, Ragnarsson, Lars-Aåke, Maes, Jan W.

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  3. 3
    Impact of Hf-Precursor Choice on Scaling and Performance of High-k Gate Dielectrics

    Impact of Hf-Precursor Choice on Scaling and Performance of High-k Gate Dielectrics by Maes, Jan Willem, Fedorenko, Yanina, Delabie, Annelies, Ragnarsson, Lars-Aåke, Swerts, Johan, Nyns, Laura, Van Elshocht, Sven, Wang, Changgong, Wilk, Glen

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  4. 4
    AVD and MOCVD TaCN-based Films for Gate Metal Applications on High k Gate Dielectrics

    AVD and MOCVD TaCN-based Films for Gate Metal Applications on High k Gate Dielectrics by Karim, Zia, Barbar, Ghassan, Boissière, Olivier, Lehnen, Peer, Lohe, Christoph, Seidel, Tom, Adelmann, Christoph, Conard, Thierry, O'Sullivan, Barry, Ragnarsson, Lars-Aåke, Schram, Tom, Van Elshocht, Sven, De Gendt, Stefan

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  5. 5
    1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

    1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor by Woo Lee, Jae, ju Cho, Moon, Simoen, Eddy, Ritzenthaler, Romain, Togo, Mitsuhiro, Boccardi, Guillaume, Mitard, Jerome, Ragnarsson, Lars-Åke, Chiarella, Thomas, Veloso, Anabela, Horiguchi, Naoto, Thean, Aaron, Groeseneken, Guido

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  6. 6
    ALD La-Based Oxides for Vt-Tuning in High-K/Metal Gate Stacks

    ALD La-Based Oxides for Vt-Tuning in High-K/Metal Gate Stacks by Swerts, Johan, Fedorenko, Yanina, Maes, Jan Willem, Tois, Eva, Delabie, Annelies, Ragnarsson, Lars-Aåke, Yu, HongYu, Nyns, Laura, Adelmann, Christoph, Van Elshocht, Sven

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  7. 7
    Atomic Layer Deposition of HfO2 on (100) and (110) Oriented Silicon Surfaces

    Atomic Layer Deposition of HfO2 on (100) and (110) Oriented Silicon Surfaces by Nyns, Laura, Ragnarsson, Lars-Aåke, Hall, Lindsey, Delabie, Annelies, Heyns, Marc, Van Elshocht, Sven, Vinckier, Chris, Zimmerman, Paul, De Gendt, Stefan

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  8. 8
    Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications

    Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications by Delabie, Annelies, Nyns, Laura, Bellenger, Florence, Caymax, Matty, Conard, Thierry, Franquet, Alexis, Houssa, Michel, Lin, D., Meuris, Marc, Ragnarsson, Lars-Aåke, Sioncke, Sonja, Swerts, Johan, Fedorenko, Yanina, Maes, Jan Willem, Van Elshocht, Sven, De Gendt, Stefan

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  9. 9
    Interface Trap Characterization of a 5.8- hbox rm AA EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique

    Interface Trap Characterization of a 5.8- hbox rm AA EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique by Cho, Moonju, Kaczer, Ben, Aoulaiche, Marc, Degraeve, Robin, Roussel, Philippe, Franco, Jacopo, Kauerauf, Thomas, Ragnarsson, Lars Aake, Hoffmann, Thomas Y, Groeseneken, Guido

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  10. 10
    Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric

    Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric by Cho, Moonju, Aoulaiche, Marc, Degraeve, Robin, Kaczer, Ben, Kauerauf, Thomas, Ragnarsson, Lars-Åke, Adelmann, Christoph, Elshocht, Sven Van, Hoffmann, Thomas Y., Groeseneken, Guido

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  11. 11
    Study of nitrogen impact on V sub(FB)-EOT roll-off by varying interfacial SiO sub(2) thickness

    Study of nitrogen impact on V sub(FB)-EOT roll-off by varying interfacial SiO sub(2) thickness by Cho, Moonju, Akheyar, Amal, Aoulaiche, Marc, Degraeve, Robin, Ragnarsson, Lars-Aake, Tseng, Joshua, Hoffmann, Thomas Y, Groeseneken, Guido

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  12. 12
    Oxide thickness- and bias-dependence of postmetallization annealing of interface states in metal-oxide-silicon diodes

    Oxide thickness- and bias-dependence of postmetallization annealing of interface states in metal-oxide-silicon diodes by RAGNARSSON, L.-A, LUNDGREN, P, OVUKA, Z, ANDERSSON, M. O

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