Search Results - Rajatora, M

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  1. 1
    Radiation resistance of MBE-grown GaInP/GaAs-based solar cells

    Radiation resistance of MBE-grown GaInP/GaAs-based solar cells by Kazantsev, A. B., Lammasniemi, J., Jaakkola, R., Rajatora, M., Rauhala, E., Räisänen, J., Jain, R. K., Pessa, M.

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  2. 2
    Large area single crystalline silicon solar cells by cost effective process

    Large area single crystalline silicon solar cells by cost effective process by Härkönen, J, Yli-Koski, M, Arpiainen, S, Juvonen, T, Grigoras, K, Rajatora, M, Marjamäki, T, Karppinen, H

    Published in Physica scripta
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  3. 3
    Proton irradiated MBE grown GaInP/GaAs single junction and tandem solar cells

    Proton irradiated MBE grown GaInP/GaAs single junction and tandem solar cells by Kazantsev, A.B., Lammasniemi, J., Jaakkola, R., Pessa, M., Rajatora, M., Jain, R.K.

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  4. 4
    Concentration dependent and independent Si diffusion in ion-implanted GaAs

    Concentration dependent and independent Si diffusion in ion-implanted GaAs by Ahlgren, T., Likonen, J., Slotte, J., Räisänen, J., Rajatora, M., Keinonen, J.

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  5. 5
    Single furnace-step processed large area mc-Si solar cells

    Single furnace-step processed large area mc-Si solar cells by Lempinen, V.-P., Harkonen, J., Kylmaluoma, J., Rajatora, M., Marjamaki, T.

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  6. 6
    Proton irradiated MBE grown GaInP/GaAs single junction and tandem solar cells

    Proton irradiated MBE grown GaInP/GaAs single junction and tandem solar cells by Kazantsev, A.B., Lammasniemi, J., Jaakkola, R., Pessa, M., Rajatora, M., Jain, R.K.

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  7. 7
    Exfoliation process of InP caused by [formula omitted] and [formula omitted] ion implantation and its correlation with ion range parameters

    Exfoliation process of InP caused by [formula omitted] and [formula omitted] ion implantation and its correlation with ion range parameters by Väkeväinen, K, Rajatora, M, Ahlgren, T, Rauhala, E, Räisänen, J

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  8. 8
    Exfoliation process of InP caused by 1H hand 4He ion implantation and its correlation with ion range parameters

    Exfoliation process of InP caused by 1H hand 4He ion implantation and its correlation with ion range parameters by VÄKEVÄINEN, K, RAJATORA, M, AHLGREN, T, RAUHALA, E, RÄISÄNEN, J

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  9. 9
    Stopping powers of GaAs for 0.3–2.5 MeV 1H and 4He ions

    Stopping powers of GaAs for 0.3–2.5 MeV 1H and 4He ions by Rajatora, M., Väkeväinen, K., Ahlgren, T., Rauhala, E., Räisänen, J., Rakennus, K.

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