Optical properties of mist CVD grown κ-Ga2O3 by Muazzam, Usman Ul, Chavan, Prasad S, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N

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A Performance Comparison Between $\beta$ -Ga 2 O 3 and GaN HEMTs by Kumar, Sandeep, Soman, Rohith, Pratiyush, Anamika Singh, Muralidharan, Rangarajan, Nath, Digbijoy N.

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In 2 Se 3 Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response by Mech, Roop K., Solanke, Swanand V., Mohta, Neha, Rangarajan, Muralidharan, Nath, Digbijoy N.

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Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with V TH  > 5V and On‐Current > 0.5 A mm −1 by Kumar, Sandeep, Vura, Sandeep, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy Neelim

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Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH>5V and On‐Current >0.5Amm−1 by Kumar, Sandeep, Vura, Sandeep, Surani Bin Dolmanan, Tripathy, Sudhiranjan, Rangarajan Muralidharan, Digbijoy Neelim Nath

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Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On‐Current > 0.5 A mm−1 by Kumar, Sandeep, Vura, Sandeep, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy Neelim

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A Performance Comparison Between [Formula Omitted]-Ga2O3 and GaN HEMTs by Kumar, Sandeep, Soman, Rohith, Anamika Singh Pratiyush, Rangarajan Muralidharan, Nath, Digbijoy N

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High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In 2 Se 3 by Mech, Roop K., Mohta, Neha, Chatterjee, Avijit, Selvaraja, Shankar Kumar, Muralidharan, Rangarajan, Nath, Digbijoy N.

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Analysis of screw dislocation mediated dark current in Al^sub 0.50^Ga^sub 0.50^N solar-blind metal-semiconductor-metal photodetectors by Rathkanthiwar, Shashwat, Kalra, Anisha, Muralidharan, Rangarajan, Nath, Digbijoy N, Raghavan, Srinivasan

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Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and β-In2Se3/GaN by Solanke, Swanand V, Rathkanthiwar, Shashwat, Kalra, Anisha, Mech, Roop Kumar, Rangarajan, Muralidharan, Raghavan, Srinivasan, Nath, Digbijoy N

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Optical Float-Zone Grown Bulk $\beta$ -Ga 2 O 3 -Based Linear MSM Array of UV-C Photodetectors by Pratiyush, Anamika Singh, Muazzam, Usman Ul, Kumar, Sandeep, Vijayakumar, P., Ganesamoorthy, S., Subramanian, N., Muralidharan, Rangarajan, Nath, Digbijoy N.

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Comparative study of GaN mesa etch characteristics in Cl2 based inductively coupled plasma with Ar and BCl3 as additive gases by Rawal, Dipendra Singh, Arora, Henika, Sehgal, Bhupender Kumar, Muralidharan, Rangarajan

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Optical Float-Zone Grown Bulk [Formula Omitted]-Ga2O3-Based Linear MSM Array of UV-C Photodetectors by Anamika Singh Pratiyush, Usman Ul Muazzam, Kumar, Sandeep, Vijayakumar, P, Ganesamoorthy, S, Subramanian, N, Rangarajan Muralidharan, Nath, Digbijoy N

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MBE-Grown $\beta$ -Ga 2 O 3 -Based Schottky UV-C Photodetectors With Rectification Ratio ~10 7 by Pratiyush, Anamika Singh, Xia, Zhanbo, Kumar, Sandeep, Zhang, Yuewei, Joishi, Chandan, Muralidharan, Rangarajan, Rajan, Siddharth, Nath, Digbijoy N.

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MBE-Grown \beta -Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107 by Pratiyush, Anamika Singh, Xia, Zhanbo, Kumar, Sandeep, Zhang, Yuewei, Joishi, Chandan, Muralidharan, Rangarajan, Rajan, Siddharth, Nath, Digbijoy N.

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Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS 2 /GaN and β -In 2 Se 3 /GaN by Solanke, Swanand V, Rathkanthiwar, Shashwat, Kalra, Anisha, Mech, Roop Kumar, Rangarajan, Muralidharan, Raghavan, Srinivasan, Nath, Digbijoy N

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Investigation of Ta 2 O 5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si by Kumar, Sandeep, Kumar, Himanshu, Vura, Sandeep, Pratiyush, Anamika Singh, Charan, Vanjari Sai, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy N.

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Monolithic Epitaxial Integration of β‑Ga2O3 with 100 Si for Deep Ultraviolet Photodetectors by Vura, Sandeep, Muazzam, Usman Ul, Kumar, Vishnu, Vanjari, Sai Charan, Muralidharan, Rangarajan, Digbijoy, Nath, Nukala, Pavan, Raghavan, Srinivasan

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MBE-Grown [Formula Omitted]-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107 by Anamika Singh Pratiyush, Xia, Zhanbo, Kumar, Sandeep, Zhang, Yuewei, Joishi, Chandan, Rangarajan Muralidharan, Rajan, Siddharth, Nath, Digbijoy N

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Dielectric Engineering of HfO 2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates by Chandrasekar, Hareesh, Kumar, Sandeep, Ganapathi, Kolla Lakshmi, Prabhu, Shreesha, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Raghavan, Srinivasan, Bhat, K. N., Mohan, Sangeneni, Muralidharan, Rangarajan, Bhat, Navakanta, Nath, Digbijoy N.

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