Search Results - Rao, M. V. Ganeswara

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  1. 1
    Exploring High-Temperature Reliability of 4H-SiC MOSFETs : A Comparative Study of High-K Gate Dielectric Materials

    Exploring High-Temperature Reliability of 4H-SiC MOSFETs : A Comparative Study of High-K Gate Dielectric Materials by M. V. Ganeswara Rao, N. Ramanjaneyulu, Sumalatha Madugula, N. P. Dharani, K. Rajesh Babu, Kallepelli Sagar

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  2. 2
    Retraction Note: Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

    Retraction Note: Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials by Ganeswara Rao, M. V., Ramanjaneyulu, N., Madugula, Sumalatha, Dharani, N. P., Rajesh Babu, K., Sagar, Kallepelli

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    Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric Materials in 5 nm Technology: A Simulation Study

    Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric Materials in 5 nm Technology: A Simulation Study by Rao, M. V. Ganeswara, Ramanjaneyulu, N., Pydi, Balamurali, Soma, Umamaheshwar, Babu, K. Rajesh, Prasad, Satti Harichandra

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    RETRACTED ARTICLE: Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

    RETRACTED ARTICLE: Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials by Ganeswara Rao, M. V., Ramanjaneyulu, N., Madugula, Sumalatha, Dharani, N. P., Rajesh Babu, K., Sagar, Kallepelli

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