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Improvement in hot carrier lifetime as a function of N sub(2) ion implantation before gate oxide growth in deep submicron NMOS devices
by
Guarin, Fernando J
,
Rauch, Stewart E I I I
,
La Rosa, Giuseppe
,
Brelsford, Kevin
Published in
IEEE electron device letters
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The statistics of NBTI-induced V sub(T) and beta mismatch shifts in pMOSFETs
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Rauch, SE III
Published in
IEEE transactions on device and materials reliability
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Role of E-E scattering in the enhancement of channel hot carrier degradation of deep-submicron NMOSFETs at high V sub(GS) conditions
by
Rauch, SE III
,
La Rosa, G
,
Guarin, F J
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IEEE transactions on device and materials reliability
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The energy-driven paradigm of NMOSFET hot-carrier effects
by
Rauch, S.E.
,
La Rosa, G.
Published in
IEEE transactions on device and materials reliability
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