Search Results - Ravikiran, Lingaparthi

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  1. 1
    Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

    Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy by Dharmarasu, Nethaji, Radhakrishnan, K, Agrawal, Manvi, Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth. E, Ing, Ng Geok

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  2. 2
    Effect of Stress Mitigating Layers on the Structural Properties of GaN Grown by Ammonia Molecular Beam Epitaxy on 100 mm Si(111)

    Effect of Stress Mitigating Layers on the Structural Properties of GaN Grown by Ammonia Molecular Beam Epitaxy on 100 mm Si(111) by Ravikiran, Lingaparthi, Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K

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  3. 3
    Enhanced NO 2 Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors

    Enhanced NO 2 Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors by Ranjan, Akhil, Lingaparthi, Ravikiran, Dharmarasu, Nethaji, Radhakrishnan, K.

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  4. 4
    Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy

    Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy by Huo, Lili, Lingaparthi, Ravikiran, Dharmarasu, Nethaji, Radhakrishnan, K, Chan, Casimir

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  5. 5
    Surface related tunneling leakage in β-Ga2O3 (001) vertical Schottky barrier diodes

    Surface related tunneling leakage in β-Ga2O3 (001) vertical Schottky barrier diodes by Lingaparthi, Ravikiran, Sasaki, Kohei, Thieu, Quang Tu, Takatsuka, Akio, Otsuka, Fumio, Yamakoshi, Shigenobu, Kuramata, Akito

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  6. 6
    Investigation of Thin-Barrier AlGaN/GaN HEMT Heterostructures for Enhanced Gas-Sensing Performance

    Investigation of Thin-Barrier AlGaN/GaN HEMT Heterostructures for Enhanced Gas-Sensing Performance by Ranjan, Akhil, Lingaparthi, Ravikiran, Dharmarasu, Nethaji, K., Radhakrishnan

    Published in IEEE sensors journal
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  7. 7
    Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes

    Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes by Mondal, Ramit Kumar, Xiong, Zhongshu, Ghimire, Mohan Kumar, Lingaparthi, Ravikiran, Nethaji, Dharmarasu, Radhakrishnan, K, Kim, Munho

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  8. 8
    GaN Schottky Metal-Semiconductor-Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE

    GaN Schottky Metal-Semiconductor-Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE by Ravikiran, Lingaparthi, Radhakrishnan, K., Dharmarasu, Nethaji, Agrawal, Manvi, Zilong Wang, Bruno, Annalisa, Soci, Cesare, Lihuang, Tng, Ang, Kian Siong

    Published in IEEE sensors journal
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  9. 9
    Surface related tunneling leakage in β -Ga 2 O 3 (001) vertical Schottky barrier diodes

    Surface related tunneling leakage in β -Ga 2 O 3 (001) vertical Schottky barrier diodes by Lingaparthi, Ravikiran, Sasaki, Kohei, Thieu, Quang Tu, Takatsuka, Akio, Otsuka, Fumio, Yamakoshi, Shigenobu, Kuramata, Akito

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