Search Results - Rengevich, . E.

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  1. 1
    Effects of γ-irradiation on AlGaN/GaN-based HEMTs

    Effects of γ-irradiation on AlGaN/GaN-based HEMTs by Vitusevich, S. A., Klein, N., Belyaev, A. E., Danylyuk, S. V., Petrychuk, M. V., Konakova, R. V., Kurakin, A. M., Rengevich, A. E., Avksentyev, A. Yu, Danilchenko, B. A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

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  2. 2
    Radiation effects in high-electron-mobility transistors

    Radiation effects in high-electron-mobility transistors by Rengevich, A. E.

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  3. 3
    Anomalous nucleosides and related compounds: XVIII. Synthesis of 1- and 2-glycosylbenzotriazoles

    Anomalous nucleosides and related compounds: XVIII. Synthesis of 1- and 2-glycosylbenzotriazoles by Chernetskii, V. P., Rengevich, . E., Usenko, L. S., Franchuk, I. F.

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  4. 4
    Effects of g-irradiation on AlGaN/GaN-based HEMTs

    Effects of g-irradiation on AlGaN/GaN-based HEMTs by Vitusevich, S A, Klein, N, Belyaev, A E, Danylyuk, S V, Petrychuk, M V, Konakova, R V, Kurakin, A M, Rengevich, A E, Avksentyev, A Y, Danilchenko, B A, Tilak, V, Smart, J, Vertiatchikh, A, Eastman, L F

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  5. 5
    Anomalous nucleosides: X. Synthesis of 1-benzotriazolylglycosides

    Anomalous nucleosides: X. Synthesis of 1-benzotriazolylglycosides by Chernetskii, V. P., Rengevich, E. E.

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  6. 6
    Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs Schottky diodes

    Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs Schottky diodes by Horvath, Z.J., Rengevich, O.V., Mamykin, S.V., Dmitruk, N.L., Van Tuyen, V., Szentpali, B., Konakova, R.V., Belyaev, A.E.

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