Search Results - Rettmann, Ryan

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  1. 1
    BOX breakdown: A novel defect mode in a 14nm SOI FinFET technology

    BOX breakdown: A novel defect mode in a 14nm SOI FinFET technology by Rettmann, Ryan, McCormack, Tim, Patterson, Oliver D., Lin, Hong, Nummy, Karen, Poindexter, Dan, Parries, Paul

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  2. 2
    Optimizing Wet Clean operations in an established manufacturing environment

    Optimizing Wet Clean operations in an established manufacturing environment by Van Roijen, Raymond, Hilscher, David F., Meagher, Colleen, Rettmann, Ryan, McKindles, Derek

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  3. 3
    Single wafer cleaning lessons in advanced node gate module development

    Single wafer cleaning lessons in advanced node gate module development by Hilscher, David F., Jaeger, Daniel, DeWan, Charlotte, Brodsky, Maryjane, Rettmann, Ryan

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    Deposited ALD SiO2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures

    Deposited ALD SiO2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures by Siddiqui, Shahab, Chowdhury, Murshed M, Brodsky, Maryjane, Rahim, Nilufa, Dai, Min, Krishnan, Siddarth, Fugardi, Steve, Wu, Ernest, Chou, Anthony, Narasimha, Shreesh, Li, Jinghong, Mcstay, Kevin, Linder, Barry, Maciejewski, Edward, Rettmann, Ryan, Mittl, Steven, Kwon, Unoh, Narayanan, Vijay, Henson, William, Schepis, Dominic, Chudzik, Michael

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  5. 5
    Characterization of Silicon-on-Glass Substrates Using Variable Angle Spectroscopic Ellipsometry

    Characterization of Silicon-on-Glass Substrates Using Variable Angle Spectroscopic Ellipsometry by Rettmann, Ryan D., Couillard, J. Gregory, Hirschman, Karl

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    Deposited ALD SiO 2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures

    Deposited ALD SiO 2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures by Siddiqui, Shahab, Chowdhury, Murshed M, Brodsky, Maryjane, Rahim, Nilufa, Dai, Min, Krishnan, Siddarth, Fugardi, Steve, Wu, Ernest, Chou, Anthony, Narasimha, Shreesh, Li, Jinghong, Mcstay, Kevin, Linder, Barry, Maciejewski, Edward, Rettmann, Ryan, Mittl, Steven, Kwon, Unoh, Narayanan, Vijay, Henson, William, Schepis, Dominic, Chudzik, Michael

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  7. 7
    Baseline Performance of NCAA Athletes on a Concussion Assessment Battery: A Report from the CARE Consortium

    Baseline Performance of NCAA Athletes on a Concussion Assessment Battery: A Report from the CARE Consortium by Katz, Barry P., Kudela, Maria, Harezlak, Jaroslaw, McCrea, Michael, McAllister, Thomas, Broglio, Steven P.

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  8. 8
    Improved CRISPR/Cas9 knock-in efficiency via the self-excising cassette (SEC) selection method in C. elegans

    Improved CRISPR/Cas9 knock-in efficiency via the self-excising cassette (SEC) selection method in C. elegans by Huang, George, de Jesus, Bailey, Koh, Alex, Blanco, Sara, Rettmann, Aubrie, DeMott, Ella, Sylvester, Melynda, Ren, Cassie, Meng, Carrie, Waterland, Skye, Rhodes, Anita, Alicea, Persephone, Flynn, Abbey, Dickinson, Daniel J, Doonan, Ryan

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