Mixed signal integrated circuits based on GaAs HEMTs by Thiede, A., Zhi-Gong, Schlechtweg, M., Lang, M., Leber, P., Zhihao Lao, Nowotny, U., Hurm, V., Rieger-Motzer, M., Ludwig, M., Sedler, M., Kohler, K., Bronner, W., Hornung, J., Hulsmann, A., Kaufel, G., Raynor, B., Schneider, J., Jakobus, T., Schroth, J., Berroth, M.

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20-40 Gb/s 0.2- mu m GaAs HEMT chip set for optical data receiver by Lang, M, Wang, Zhi-Gong, Lao, Zhihao, Schlechtweg, N, Thiede, A, Rieger-Motzer, M, Sedler, N, Bronner, W, Kaufel, G, Kohler, K, Hulsmann, A, Raynor, B

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35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-/spl mu/m AlGaAs/GaAs-HEMTs by Zhihao Lao, Bronner, W., Thiede, A., Schlechtweg, M., Hulsmann, A., Rieger-Motzer, M., Kaufel, G., Raynor, B., Sedler, M.

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35-GHz static and 48-GHz dynamic frequency divider ICs using0.2-mu m AlGaAs/GaAs-HEMTs by Lao, Zhihao, Bronner, W, Thiede, A, Schlechtweg, M, Hulsmann, A, Rieger-Motzer, M, Kaufel, G, Raynor, B, Sedler, M

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20-40 Gb/s 0.2-/spl mu/m GaAs HEMT chip set for optical data receiver by Lang, M., Zhi-Gong Wang, Zhihao Lao, Schlechtweg, N., Thiede, A., Rieger-Motzer, M., Sedler, N., Bronner, W., Kaufel, G., Kohler, K., Hulsmann, A., Raynor, B.

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Mixed signal integrated circuits based on GaAs HEMT's : Special section on impacts of emerging technologies on VLSI systems by THIEDE, A, WANG, Z.-G, SEDLER, M, KÖHLER, K, BRONNER, W, HORNUNG, J, HÜLSMANN, A, KAUFEL, G, RAYNOR, B, SCHNEIDER, J, JAKOBUS, T, SCHROTH, J, SCHLECHTWEG, M, BERROTH, M, LANG, M, LEBER, P, LAO, Z, NOWOTNY, U, HURM, V, RIEGER-MOTZER, M, LUDWIG, M

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Circuit techniques for 10 and 20 Gb/s clock recovery using a fully balanced narrowband regenerative frequency divider with 0.3 /spl mu/m HEMTs [SDH/SONET] by Zhi-Gong Wang, Berroth, M., Thiede, A., Rieger-Motzer, M., Hofmann, P., Hulsmann, A., Kohler, K., Raynor, B., Schneider, J., Briggmann, D.

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A completely integrated single-chip phase-locked loop with a 15 GHz VCO using 0.2 /spl mu/m E-/D-HEMT-technology by Leber, P., Baumberger, W., Lang, M., Rieger-Motzer, M., Bronner, W., Hulsmann, A., Raynor, B.

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A completely integrated single-chip PLL with a 34 GHz VCO using 0.2 /spl mu/m E-/D-HEMT-technology by Lang, M., Leber, P., Wang, Z.G., Lao, Z., Rieger-Motzer, M., Bronner, W., Hulsmann, A., Kaufel, G., Raynor, B.

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31 GHz Static and 39 GHz Dynamic Frequency Divider ICs Using 0.2 μm-AlGaAs/GaAs-HEMTs by Lao, Z., Berroth, M., Rieger-Motzer, M., Thiede, A., Hurm, V., Sedler, M., Bronner, W., Hulsmann, A., Raynor, B.

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A monolithic 24.9 GHz limiting amplifier using 0.2 /spl mu/m-AlGaAs/GaAs-HEMTs by Lao, Z., Berroth, M., Hurm, V., Rieger-Motzer, M., Thiede, A., Bronner, W., Hulsmann, A., Raynor, B.

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Single-Chip 4 Bit 35 GHz Phase-Shifting Receiver with a Gb/s Digital Interface Circuitry by Wang, Z.-G., Berroth, M., Thiede, A., Schlechtweg, M., Sedler, M., Seibel, J., Rieger-Motzer, M., Raynor, B., Bronner, W., Fink, T., Huder, B., Rittmayer, R., Schroth, J.

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High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs by Lao, Z., Thiede, A., Nowotny, U., Schlechtweg, M., Hurm, V., Bronner, W., Hornung, J., Rieger-Motzer, M., Kaufel, G., Kohler, K., Hulsmann, A.

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Mixed signal circuits based on a 0.2 /spl mu/m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology by Thiede, A., Schlechtweg, M., Hurm, V., Wang, Z.-G., Lang, M., Leber, P., Lao, Z., Nowotny, U., Rieger-Motzer, M., Sedler, M., Kohler, K., Bronner, W., Fink, T., Hulsmann, A., Kaufel, G., Raynor, B., Schneider, J., Jakobus, T., Schroth, J., Berroth, M.

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