Search Results - Rmaily, R.

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  1. 1
    Parameters estimation of the single and double diode photovoltaic models using a Gauss–Seidel algorithm and analytical method: A comparative study

    Parameters estimation of the single and double diode photovoltaic models using a Gauss–Seidel algorithm and analytical method: A comparative study by Et-torabi, K., Nassar-eddine, I., Obbadi, A., Errami, Y., Rmaily, R., Sahnoun, S., El fajri, A., Agunaou, M.

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  2. 2
    A new generalized model of the effective mobility in MOS transistors operated from helium to room temperature

    A new generalized model of the effective mobility in MOS transistors operated from helium to room temperature by Rmaily, R., Rais, K.

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  3. 3
    AN ACCURATE METHOD FOR EXTRACTING THE CRITICAL FIELD IN SHORT CHANNEL NMOS DEVICES

    AN ACCURATE METHOD FOR EXTRACTING THE CRITICAL FIELD IN SHORT CHANNEL NMOS DEVICES by AMHOUCHE, Y, EL ABBASSI, A, RAÏS, K, RMAILY, R

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  4. 4
    A PHYSICAL MODEL FOR MOSFET DRAIN CURRENT IN NON-OHMIC REGIME USING OHMIC REGIME OPERATION

    A PHYSICAL MODEL FOR MOSFET DRAIN CURRENT IN NON-OHMIC REGIME USING OHMIC REGIME OPERATION by EL ABBASSI, A, AMHOUCHE, Y, RAÏS, K, RMAILY, R

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  5. 5
    ANALYSIS OF TEMPERATURE AND DRAIN VOLTAGE DEPENDENCE OF SUBSTRATE CURRENT IN DEEP SUBMICROMETER MOSFET'S

    ANALYSIS OF TEMPERATURE AND DRAIN VOLTAGE DEPENDENCE OF SUBSTRATE CURRENT IN DEEP SUBMICROMETER MOSFET'S by Y. AMHOUCHE, A. EL ABBASSI, K. RAIS, R. RMAILY

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  6. 6
    CHARACTERIZATION OF SERIES RESISTANCES AND MOBILITY ATTENUATION PHENOMENA IN SHORT CHANNEL MOS TRANSISTORS

    CHARACTERIZATION OF SERIES RESISTANCES AND MOBILITY ATTENUATION PHENOMENA IN SHORT CHANNEL MOS TRANSISTORS by El Abbassi, A., Amhouche, Y., Bendada, E., Rmaily, R., Raïs, K.

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  7. 7
    NEW METHOD FOR DETERMINATION OF DRAIN SATURATION VOLTAGE IN SHORT CHANNEL MOS DEVICES BETWEEN LIQUID HELIUM TO ROOM TEMPERATURE

    NEW METHOD FOR DETERMINATION OF DRAIN SATURATION VOLTAGE IN SHORT CHANNEL MOS DEVICES BETWEEN LIQUID HELIUM TO ROOM TEMPERATURE by AMHOUCHE, Y, EL ABBASSI, A, RAÏS, K, BENDADA, E, RMAILYA, R

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  8. 8
    New method for determination of drain saturation voltage in submicrometer MOSFETs between liquid helium to room temperature

    New method for determination of drain saturation voltage in submicrometer MOSFETs between liquid helium to room temperature by Amhouche, Y., El Abbassi, A., Rais, K., Rmaily, R.

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  9. 9
    An accurate method for extracting the critical field in short channel NMOS devices

    An accurate method for extracting the critical field in short channel NMOS devices by Amhouche, Y., El Abbassi, A., Rais, K., Rmaily, R.

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  10. 10
    Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep SubmicrometerMOSFET′S

    Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep SubmicrometerMOSFET′S by Amhouche, Y., El Abbassi, A., Raïs, K., Rmaily, R.

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  11. 11
    New Method for Determination of Drain Saturation Voltage in Short Channel MOS DevicesBetween Liquid Helium to Room Temperature

    New Method for Determination of Drain Saturation Voltage in Short Channel MOS DevicesBetween Liquid Helium to Room Temperature by Amhouche, Y., El Abbassi, A., Raïs, K., Bendada, E., Rmaily, R.

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