Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al x Ga1− x )0.5In0.5P/GaP light-emitting diodes by Kish, F. A., Steranka, F. M., DeFevere, D. C., Vanderwater, D. A., Park, K. G., Kuo, C. P., Osentowski, T. D., Peanasky, M. J., Yu, J. G., Fletcher, R. M., Steigerwald, D. A., Craford, M. G., Robbins, V. M.

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High performance AlGaInP visible light-emitting diodes by KUO, C. P, FLETCHER, R. M, OSENTOWSKI, T. D, LARDIZABAL, M. C, CRAFORD, M. G, ROBBINS, V. M

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Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P by FOUQUET, J. E, ROBBINS, V. M, ROSNER, J, BLUM, O

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The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer by Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Huang, K. H., Craford, M. G., Robbins, V. M.

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Impact ionization in AlxGa1-xAs for x=0.1-0.4 by ROBBINS, V. M, SMITH, S. C, STILLMAN, G. E

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Experimental determination of impact ionization coefficients in (100) GaAs by BULMAN, G. E, ROBBINS, V. M, BRENNAN, K. F, HESS, K, STILLMAN, C. E

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Be diffusion in InGaAs/InP heterojunction bipolar transistors by Bahl, S.R., Moll, N., Robbins, V.M., Hao-Chung Kuo, Moser, B.G., Stillman, G.E.

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Electron and hole impact ionization coefficients in (100) and in (111) Si by ROBBINS, V. M, WANG, T, BRENNAN, K. F, HESS, K, STILLMAN, G. E

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Subthreshold electron velocity-field characteristics of GaAs and In0.53Ga0.47As by HAASE, M. A, ROBBINS, V. M, TABATABAIE, N, STILLMAN, G. E

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Impact ionization coefficients in (111) InP by TABATABAIE, N, ROBBINS, V. M, PAN, N, STILLMAN, G. E

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Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases by Goldman, R. S., Kavanagh, K. L., Wieder, H. H., Robbins, V. M., Ehrlich, S. N., Feenstra, R. M.

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The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements by Bulman, G.E., Robbins, V.M., Stillman, G.E.

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Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs by Wakita, A.S., Rohdin, H., Su, C.-Y., Moll, N., Nagy, A., Robbins, V.M.

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Low-noise bias reliability of AlInAs/GaInAs MODFETs with linearly graded low-temperature buffer layers grown on GaAs substrates by Wakita, A.S., Rohdin, H., Robbins, V.M., Moll, N., Su, C.-Y., Nagy, A., Basile, D.P.

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III-V compound semiconductor devices: Optical detectors by Stillman, G.E., Robbins, V.M., Tabatabaie, N.

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Impurity diffusion and layer interdiffusion in AlxGa1-xAs-GaAs heterostructures by DEPPE, D. G, HOLONYAK, N. JR, PLANO, W. E, ROBBINS, V. M, DALLESASSE, J. M, HSIEH, K. C, BAKER, J. E

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Tellurium induced lattice dilation in OMVPE grown InP by Kellert, F. G., Chan, K. T., Turner, J. E., Robbins, V. M.

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Impact ionization in InP and GaAs by Stillman, G.E., Robbins, V.M., Hess, K.

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VIA-2 lack of orientation dependence of impact ionization coefficients in InP by Tabatabaie, N., Robbins, V.M., Brennan, K.F., Hess, K., Stillman, G.E.

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Impact ionization in Al x Ga1− x As for x =0.1–0.4 by Robbins, V. M., Smith, S. C., Stillman, G. E.

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