Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation by Scandurra, Antonino, Ragonese, Paolo, Calabretta, Cristiano, Zahra, Khadisha, Soomary, Liam, Roccaforte, Fabrizio, Greco, Giuseppe, Piluso, Nicolò, Eloisa Castagna, Maria, Iucolano, Ferdinando, Severino, Andrea, Bruno, Elena, Mirabella, Salvo

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Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) by Galizia, Bruno, Fiorenza, Patrick, Bongiorno, Corrado, Pécz, Béla, Fogarassy, Zsolt, Schilirò, Emanuela, Giannazzo, Filippo, Roccaforte, Fabrizio, Nigro, Raffaella Lo

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Strain, Doping, and Electronic Transport of Large Area Monolayer MoS 2 Exfoliated on Gold and Transferred to an Insulating Substrate by Panasci, Salvatore Ethan, Schilirò, Emanuela, Greco, Giuseppe, Cannas, Marco, Gelardi, Franco M., Agnello, Simonpietro, Roccaforte, Fabrizio, Giannazzo, Filippo

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Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator by Fiorenza, Patrick, Greco, Giuseppe, Iucolano, Ferdinando, Patti, Alfonso, Roccaforte, Fabrizio

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Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior wit... by Greco, Giuseppe, Fiorenza, Patrick, Iucolano, Ferdinando, Severino, Andrea, Giannazzo, Filippo, Roccaforte, Fabrizio

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Correction to “Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate” by Panasci, Salvatore Ethan, Schilirò, Emanuela, Greco, Giuseppe, Cannas, Marco, Gelardi, Franco M., Agnello, Simonpietro, Roccaforte, Fabrizio, Giannazzo, Filippo

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A Low Temperature Growth of Cu[sub.2]O Thin Films as Hole Transporting Material for Perovskite Solar Cells by Pellegrino, Anna L, Lo Presti, Francesca, Smecca, Emanuele, Valastro, Salvatore, Greco, Giuseppe, Di Franco, Salvatore, Roccaforte, Fabrizio, Albe, Malandrino, Graziella

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Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures by Greco, Giuseppe, Fiorenza, Patrick, Giannazzo, Filippo, Alberti, Alessandra, Roccaforte, Fabrizio

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Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology by Li, Fan, Roccaforte, Fabrizio, Greco, Giuseppe, Fiorenza, Patrick, La Via, Francesco, Pérez-Tomas, Amador, Evans, Jonathan Edward, Fisher, Craig Arthur, Monaghan, Finn Alec, Mawby, Philip Andrew, Jennings, Mike

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Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology by Lo Nigro, Raffaella, Battiato, Sergio, Greco, Giuseppe, Fiorenza, Patrick, Roccaforte, Fabrizio, Malandrino, Graziella

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Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements by Fiorenza, Patrick, La Magna, Antonino, Vivona, Marilena, Roccaforte, Fabrizio

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Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition by Galizia, Bruno, Fiorenza, Patrick, Schilirò, Emanuela, Pecz, Bela, Foragassy, Zsolt, Greco, Giuseppe, Saggio, Mario, Cascino, Salvatore, Lo Nigro, Raffaella, Roccaforte, Fabrizio

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Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation by Scandurra, Antonino, Testa, Matteo, Franzò, Giorgia, Greco, Giuseppe, Roccaforte, Fabrizio, Castagna, Maria Eloisa, Calabretta, Cristiano, Severino, Andrea, Iucolano, Ferdinando, Bruno, Elena, Mirabella, Salvatore

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Al[sub.2]O[sub.3] Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices by Schilirò, Emanuela, Fiorenza, Patrick, Lo Nigro, Raffaella, Galizia, Bruno, Greco, Giuseppe, Di Franco, Salvatore, Bongiorno, Corrado, La Via, Francesco, Giannazzo, Filippo, Roccaforte, Fabrizio

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Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors by Fiorenza, Patrick, Vivona, Marilena, Iucolano, Ferdinando, Severino, Andrea, Lorenti, Simona, Nicotra, Giuseppe, Bongiorno, Corrado, Giannazzo, Filippo, Roccaforte, Fabrizio

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Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO 2 /4H–SiC interfaces by Fiorenza, Patrick, Di Franco, Salvatore, Giannazzo, Filippo, Roccaforte, Fabrizio

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Interface Structure and Doping of Chemical Vapor Deposition‐Grown MoS 2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations by Panasci, Salvatore Ethan, Deretzis, Ioannis, Schilirò, Emanuela, La Magna, Antonino, Roccaforte, Fabrizio, Koos, Antal, Pécz, Béla, Agnello, Simonpietro, Cannas, Marco, Giannazzo, Filippo

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Effect of air on oxygen p-doped graphene on SiO2 by Piazza, Aurora, Giannazzo, Filippo, Buscarino, Gianpiero, Fisichella, Gabriele, La Magna, Antonino, Roccaforte, Fabrizio, Cannas, Marco, Gelardi, Franco Mario, Agnello, Simonpietro

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Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates by Greco, Giuseppe, Fiorenza, Patrick, Schilirò, Emanuela, Bongiorno, Corrado, Di Franco, Salvatore, Coulon, Pierre-Marie, Frayssinet, Eric, Bartoli, Florian, Giannazzo, Filippo, Alquier, Daniel, Cordier, Yvon, Roccaforte, Fabrizio

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Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices by Schilirò, Emanuela, Fiorenza, Patrick, Lo Nigro, Raffaella, Galizia, Bruno, Greco, Giuseppe, Di Franco, Salvatore, Bongiorno, Corrado, La Via, Francesco, Giannazzo, Filippo, Roccaforte, Fabrizio

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