Polycrystalline silicon gate originated CMOS device failure investigated by Scanning Spreading Resistance Microscopy by Doering, Stefan, Wachowiak, Andre, Rochel, Markus, Nowak, Christian, Hoffmann, Marko, Winkler, Uwe, Richter, Mirco, Roetz, Hagen, Eckl, Stefan, Mikolajick, Thomas

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A low-cost fully self-aligned SiGe BiCMOS technology using selective epitaxy and a lateral quasi-single-poly integration concept by Tilke, A.T., Rochel, M., Berkner, J., Rothenhausser, S., Stahrenberg, K., Wiedemann, J., Wagner, C., Dahl, C.

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Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs by Tilke, Armin T., Rothenhäußer, Steffen, Rochel, Markus, Stahrenberg, Knut, Goller, Klaus, Junge, Axel, Pribil, Andreas, Föste, Bernd, Wiedemann, Jörg, Tegeler, Martin, Berkner, Jörg, Wagner, Cajetan, Dahl, Claus

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Fast characterization of electrical fails overlaying to inline defect inspection during 90 nm copper logic technology development by Weiss, V., Fuhrmann, E., Junge, A., Lutz, R., Rochel, M., Seider-Schmidt, M., Unger, R.-S., Wallace, C., Kuei, J.

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Simulation of networks of spiking neurons: a review of tools and strategies by Brette, Romain, Rudolph, Michelle, Carnevale, Ted, Hines, Michael, Beeman, David, Bower, James M, Diesmann, Markus, Morrison, Abigail, Goodman, Philip H, Harris, Jr, Frederick C, Zirpe, Milind, Natschläger, Thomas, Pecevski, Dejan, Ermentrout, Bard, Djurfeldt, Mikael, Lansner, Anders, Rochel, Olivier, Vieville, Thierry, Muller, Eilif, Davison, Andrew P, El Boustani, Sami, Destexhe, Alain

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