Search Results - Rohmfeld, Stefan

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    Quantitative evaluation of biaxial strain in epitaxial 3C-SiC layers on Si(100) substrates by Raman spectroscopy

    Quantitative evaluation of biaxial strain in epitaxial 3C-SiC layers on Si(100) substrates by Raman spectroscopy by Rohmfeld, Stefan, Hundhausen, Martin, Ley, Lothar, Zorman, Christian A., Mehregany, Mehran

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  2. 2
    Near-thermal equilibrium growth of SiC by physical vapor transport

    Near-thermal equilibrium growth of SiC by physical vapor transport by Schulze, Norbert, Barrett, Donovan L., Pensl, Gerhard, Rohmfeld, Stefan, Hundhausen, Martin

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