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Search Results - Rommeluère, J.F.
Search Results - Rommeluère, J.F.
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Morphology of ZnO grown by MOCVD on sapphire substrates
by
Munuera, C
,
Zúñiga-Pérez, J
,
Rommeluere, J.F
,
Sallet, V
,
Triboulet, R
,
Soria, F
,
Muñoz-Sanjosé, V
,
Ocal, C
Published in
Journal of crystal growth
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Advances in HgCdTe N—P—N—P photoconductive structures
by
Le Meur, M.A.
,
Cuniot, M.
,
Rommeluère, J.F.
,
Tromson-Carli, A.
,
Triboulet, R.
,
Marfaing, Y.
Published in
Journal of crystal growth
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Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation
by
Svob, L.
,
Chèze, I.
,
Lusson, A.
,
Ballutaud, D.
,
Rommeluère, J.F.
,
Marfaing, Y.
Published in
Journal of crystal growth
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Some aspects of the MOCVD growth of ZnO on sapphire using tert-butanol
by
Sallet, V
,
Thiandoume, C
,
Rommeluere, J.F
,
Lusson, A
,
Rivière, A
,
Rivière, J.P
,
Gorochov, O
,
Triboulet, R
,
Muñoz-Sanjosé, V
Published in
Materials letters
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MOCVD Growth of ZnO on Sapphire Using Tert-Butanol
by
Sallet, V.
,
Rommeluere, J.F.
,
Lusson, A.
,
Rivière, A.
,
Fusil, S.
,
Gorochov, O.
,
Triboulet, R.
Published in
Physica status solidi. B. Basic research
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Electrical characterization of laser-induced deposits of aluminium on gallium arsenide
by
Tonneau, D.
,
Cuniot, M.
,
Laroche, J.M.
,
Orain, H.
,
Rommeluere, J.F.
,
Bouree, J.E.
Published in
Thin solid films
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Photoluminescence and excitation spectra of O Te center in ZnTe:O
by
Caneau, C.
,
Schneider, M.
,
Rommeluere, J.F.
Published in
The Journal of physics and chemistry of solids
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Photoluminescence and excitation spectra of OTe center in ZnTe:O
by
Caneau, C.
,
Schneider, M.
,
Rommeluere, J.F.
Published in
The Journal of physics and chemistry of solids
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Luminescence and electrical properties of Mg x Zn 1-x Te alloys
by
Somogyi, K.
,
Chevallier, J.
,
Rommeluere, J.F.
,
Marine, J.
,
Schaub, B.
Published in
IEEE transactions on electron devices
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Luminescence and electrical properties of MgxZn1-xTe alloys
by
Somogyi, K.
,
Chevallier, J.
,
Rommeluere, J.F.
,
Marine, J.
,
Schaub, B.
Published in
IEEE transactions on electron devices
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