Search Results - Rubtsevich, I. I.

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  1. 1
    Investigation of radiation-induced defects in the electron irradiated power transistor structures

    Investigation of radiation-induced defects in the electron irradiated power transistor structures by Korshunov, F.P., Bogatyrev, Yu.V., Lastovsky, S.B., Kulgachev, V.I., Anufriev, L.P., Rubtsevich, I.I., Golubev, N.F.

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  2. 2
    Diagnostics of the technological characteristics of high–power transistors using relaxation impedance spectrometry of thermal processes

    Diagnostics of the technological characteristics of high–power transistors using relaxation impedance spectrometry of thermal processes by Vaskou, A. S., Niss, V. S., Kononenko, V. K., Turtsevich, A. S., Rubtsevich, I. I., Solov’ev, Ya. A., Kerentsev, A. F.

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  3. 3
    Parts screening for ESD susceptibility

    Parts screening for ESD susceptibility by Gorlov, M. I., Emel?yanov, V. A., Rubtsevich, I. I., Smirnov, D. Yu

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    Simulation and Optimization of Power DMOS Transistors Parameters

    Simulation and Optimization of Power DMOS Transistors Parameters by Emelyanov, V.A., Baranov, V.V., Rubtsevich, I.I., Anufriev, D.L.

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