Application of microwave detection of the Shubnikov-de Haas effect in two-dimensional systems by LINKE, H, OMLING, P, RAMVALL, P, MEYER, B. K, DRECHSLER, M, WETZEL, C, RUDELOFF, R, SCHOLZ, F

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Influence of carrier capture on the quantum efficiency of as-etched and epitaxially buried In0.53Ga0.47As/InP quantum wires by LEHR, G, BERGMANN, R, RUDELOFF, R, SCHOLZ, F, SCHWEIZER, H

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In situ selective-area etching and MOVPE regrowth of GaInAs-InP on InP substrates by Henie, B, Rudeloff, R, Bolay, H, Scholz, F

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Open and buried quantum wires: Fabrication and comparison of side wall influences by Menschig, A., Kübler, P.A., Rudeloff, R., Hommel, J., Schweizer, H.

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Systematic studies of low dimensional effects depending on crystallographic overgrowth by Lehr, G., Bergmann, R., Rudeloff, R., Hommel, J., Scholz, F., Schweizer, H.

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(6Li,6He) reaction and Gamow-Teller beta decay by Moosburger, M, Aschenauer, E, Dennert, H, Eyrich, W, Lehmann, A, Rudeloff, R, Schlösser, H, Wirth, H, Gils, HJ, Rebel, H, Zagromski, S

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Influence of carrier capture on the quantum efficiency of as-etched and epitaxially buried In(0.53)Ga(0.47)As/InP quantum wires by Lehr, G, Bergmann, R, RUDELOFF, R, Scholz, F, Schweizer, H

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In situ selective-area etching and MOVPE regrowth of GaInAs-InP on InP substrates: Selective-area epitaxy, non-planar epitaxy and integration technology by HENLE, B, RUDELOFF, R, BOLAY, H, SCHOLZ, F

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GaInAs(P)-InP quantum well structures for optoelectronic devices grown by MOVPE using DADI as a novel liquid In precursor by Scholz, F., Rudeloff, R., Henle, B., Harle, V., Scheuble, E., Tutken, T., Hangleiter, A., Pohl, L.

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In situ selective area etching and MOVPE regrowth of GaInAs-InP on InP substrates by Henle, B., Rudeloff, R., Bolay, H., Scholz, F.

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