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“Higher- κ” dielectrics for advanced silicon microelectronic devices: A combinatorial research study
by
Green, M.L.
,
Schenck, P.K.
,
Chang, K.-S.
,
Ruglovsky, J.
,
Vaudin, M.
Published in
Microelectronic engineering
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"Higher-@@i[kappa]@" dielectrics for advanced silicon microelectronic devices: A combinatorial research study
by
Green, M L
,
Schenck, P K
,
Chang, K.-S.
,
Ruglovsky, J
,
Vaudin, M
Published in
Microelectronic engineering
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Article
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Electroluminescence in Ruthenium(II) Dendrimers
by
Barron, Jason A
,
Bernhard, Stefan
,
Houston, Paul L
,
Abruña, Héctor D
,
Ruglovsky, Jennifer L
,
Malliaras, George G
Published in
The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory
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Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer
by
Park, Young-Bae
,
Ruglovsky, Jennifer L.
,
Atwater, Harry A.
Published in
Applied physics letters
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Higher-K dielectrics for advanced silicon microelectronic devices: A combinatorial research study
by
GREEN, M. L
,
SCHENCK, P. K
,
CHANG, K.-S
,
RUGLOVSKY, J
,
VAUDIN, M
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Conference Proceeding
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X-ray diffraction study of the optimization of MgO growth conditionsfor magnetic tunnel junctions
by
O, Se Young
,
Lee, Chan-Gyu
,
Shapiro, Alexander J.
,
Egelhoff, William F.
,
Vaudin, Mark D.
,
Ruglovsky, Jennifer L.
,
Mallett, Jonathan
,
Pong, Philip W. T.
Published in
Journal of applied physics
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X-ray diffraction study of the optimization of MgO growth conditions for magnetic tunnel junctions
by
O, Se Young
,
Lee, Chan-Gyu
,
Shapiro, Alexander J.
,
Egelhoff, William F.
,
Vaudin, Mark D.
,
Ruglovsky, Jennifer L.
,
Mallett, Jonathan
,
Pong, Philip W. T.
Published in
Journal of applied physics
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