An 80-Tile Sub-100-W TeraFLOPS Processor in 65-nm CMOS by Vangal, S.R., Howard, J., Ruhl, G., Dighe, S., Wilson, H., Tschanz, J., Finan, D., Singh, A., Jacob, T., Jain, S., Erraguntla, V., Roberts, C., Hoskote, Y., Borkar, N., Borkar, S.

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A 48-Core IA-32 Processor in 45 nm CMOS Using On-Die Message-Passing and DVFS for Performance and Power Scaling by Howard, J, Dighe, S, Vangal, S R, Ruhl, G, Borkar, N, Jain, S, Erraguntla, V, Konow, M, Riepen, M, Gries, M, Droege, G, Lund-Larsen, T, Steibl, S, Borkar, S, De, V K, Van Der Wijngaart, R

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Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors by Lukosius, M., Kaynak, C. Baristiran, Kubotsch, S., Blomberg, T., Ruhl, G., Wenger, Ch

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2 GHz 2 Mb 2T Gain Cell Memory Macro With 128 GBytes/sec Bandwidth in a 65 nm Logic Process Technology by Somasekhar, D., Yibin Ye, Aseron, P., Shih-Lien Lu, Khellah, M.M., Howard, J., Ruhl, G., Karnik, T., Borkar, S., De, V.K., Keshavarzi, A.

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Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications by Lukosius, M., Kaynak, C. Baristiran, Wenger, Ch, Ruhl, G., Rushworth, S., Baumann, P.

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Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material by BARISTIRAN KAYNAK, C, LUKOSIUS, M, TILLACK, B, WENGER, Ch, BLOMBERG, T, RUHL, G

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Enhanced leakage current behavior of Sr2Ta2O7-x/SrTiO3 bilayer dielectrics for metal-insulator-metal capacitors by BARISTIRAN KAYNAK, C, LUKOSIUS, M, COSTINA, I, TILLACK, B, WENGER, Ch, RUHL, G, BLOMBERG, T

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Simulations and measurements of annealed pyrolytic graphite-metal composite baseplates by Streb, F, Ruhl, G, Schubert, A, Zeidler, H, Penzel, M, Flemmig, S, Todaro, I, Squatrito, R, Lampke, T

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Metal–insulator–metal capacitors with MOCVD grown Ce–Al–O as a dielectric by Lukosius, M., Baristiran-Kaynak, C., Abrutis, A., Skapas, M., Kubilius, V., Zauner, A., Ruhl, G., Wenger, Ch

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Investigations of thermal annealing effects on electrical and structural properties of SrTaO based MIM capacitor by Kaynak, C. Baristiran, Lukosius, M., Costina, I., Tillack, B., Wenger, Ch, Ruhl, G., Rushworth, S.

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Metal-Insulator-Metal capacitors with ALD grown SrTiO3: Influence of Pt electrodes by Lukosius, M, Blomberg, T, Walczyk, D, Ruhl, G, Wenger, Ch

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A TCP offload accelerator for 10 Gb/s Ethernet in 90-nm CMOS by Hoskote, Y., Bloechel, B.A., Dermer, G.E., Erraguntla, V., Finan, D., Howard, J., Klowden, D., Narendra, S.G., Ruhl, G., Tschanz, J.W., Sriram Vangal, Veeramachaneni, V., Wilson, H., Jianping Xu, Borkar, N.

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A 280mV-to-1.2V wide-operating-range IA-32 processor in 32nm CMOS by Jain, S., Khare, S., Yada, S., Ambili, V., Salihundam, P., Ramani, S., Muthukumar, S., Srinivasan, M., Kumar, A., Gb, S. K., Ramanarayanan, R., Erraguntla, V., Howard, J., Vangal, S., Dighe, S., Ruhl, G., Aseron, P., Wilson, H., Borkar, N., De, V., Borkar, S.

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Low dielectric constant materials for interlayer dielectric: (Invited paper) by Treichel, H., Ruhl, G., Ansmann, P., Würl, R., Müller, Ch, Dietlmeier, M.

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Going ballistic: Graphene hot electron transistors by Vaziri, S., Smith, A.D., Östling, M., Lupina, G., Dabrowski, J., Lippert, G., Mehr, W., Driussi, F., Venica, S., Di Lecce, V., Gnudi, A., König, M., Ruhl, G., Belete, M., Lemme, M.C.

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A 48-Core IA-32 message-passing processor with DVFS in 45nm CMOS by Howard, J., Dighe, S., Hoskote, Y., Vangal, S., Finan, D., Ruhl, G., Jenkins, D., Wilson, H., Borkar, N., Schrom, G., Pailet, F., Jain, S., Jacob, T., Yada, S., Marella, S., Salihundam, P., Erraguntla, V., Konow, M., Riepen, M., Droege, G., Lindemann, J., Gries, M., Apel, T., Henriss, K., Lund-Larsen, T., Steibl, S., Borkar, S., De, V., Van Der Wijngaart, R., Mattson, T.

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Amoxicillin plus omeprazole versus triple therapy for eradication of Helicobacter pylori in duodenal ulcer disease: a prospective, randomized, and controlled study by Labenz, J, Gyenes, E, Rühl, G H, Börsch, G

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Dry etch processes for the fabrication of EUV masks by LETZKUS, F, BUTSCHKE, J, IRMSCHER, M, KAMM, F. M, KOEPERNIK, C, MATHUNI, J, RAU, J, RUHL, G

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Dry etch processes for the fabrication of EUV masks by Letzkus, F., Butschke, J., Irmscher, M., Kamm, F.M., Koepernik, C., Mathuni, J., Rau, J., Ruhl, G.

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Three dimensional metallization for vertically integrated circuits by Ramm, P., Bollmann, D., Braun, R., Buchner, R., Cao-Minh, U., Engelhardt, M., Errmann, G., Graßl, T., Hieber, K., Hübner, H., Kawala, G., Kleiner, M., Klumpp, A., Kühn, S., Landesberger, C., Lezec, H., Muth, W., Pamler, W., Popp, R., Renner, E., Ruhl, G., Sänger, A., Scheler, U., Schertel, A., Schmidt, C., Schwarzl, S., Weber, J., Weber, W.

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