Search Results - Rusch, Oleg

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    Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope

    Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope by Yoshikawa, Masanobu, Murakami, Masataka, Ushida, Tomoyuki, Samejima, Junichiro, Mitsuzawa, Kana, Matoba, Nobuhiro, Lim, Minwho, Rusch, Oleg, Rommel, Mathias

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  2. 2
    Highly Efficient Floating Field Rings for SiC Power Electronic Devices - A Systematic Experimental Study

    Highly Efficient Floating Field Rings for SiC Power Electronic Devices - A Systematic Experimental Study by Rusch, Oleg, Moult, Jonathan, Erlbacher, Tobias, Corcoran, Yunji L., Broderick, Lirong Z., Tong, Tong

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    A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation

    A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation by Kupfer, Barbara, Koo, Sang Mo, Förthner, Julietta, Byun, Dong Wook, Ehrensberger, Kevin, Shin, Hoon Kyu, Oertel, Susanne, Rusch, Oleg, Lim, Minwho, Beuer, Susanne, Csato, Constantin, Kim, Seongjun, Erlbacher, Tobias

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