Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing by Ryu, Hojoon, Wu, Haonan, Rao, Fubo, Zhu, Wenjuan

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Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation by Lee, Hanwool, Ryu, Hojoon, Zhu, Wenjuan

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Empowering 2D nanoelectronics via ferroelectricity by Ryu, Hojoon, Xu, Kai, Li, Dawei, Hong, Xia, Zhu, Wenjuan

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Strong Temperature Effect on the Ferroelectric Properties of CuInP2S6 and Its Heterostructures by Zhao, Zijing, Xu, Kai, Ryu, Hojoon, Zhu, Wenjuan

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High Temperature Operation of E-mode and D-mode AlGaN/GaN MIS-HEMTs with Recessed Gates by Lee, Hanwool, Ryu, Hojoon, Kang, Junzhe, Zhu, Wenjuan

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Nonconventional Analog Comparators Based on Graphene and Ferroelectric Hafnium Zirconium Oxide by Liu, Jialun, Ryu, Hojoon, Zhu, Wenjuan

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Stable High Temperature Operation of p-GaN Gate HEMT With Etch-Stop Layer by Lee, Hanwool, Ryu, Hojoon, Kang, Junzhe, Zhu, Wenjuan

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Content-Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing by Zhao, Zijing, Kang, Junzhe, Tunga, Ashwin, Ryu, Hojoon, Shukla, Ankit, Rakheja, Shaloo, Zhu, Wenjuan

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Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide by Ryu, Hojoon, Xu, Kai, Kim, Jinhong, Kang, Sangmin, Guo, Ji, Zhu, Wenjuan

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Empowering 2D nanoelectronics via ferroelectricity by Ryu, Hojoon, Xu, Kai, Li, Dawei, Hong, Xia, Zhu, Wenjuan

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Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP 2 S 6 and InZnO by Ryu, Hojoon, Kang, Junzhe, Park, Minseong, Bae, Byungjoon, Zhao, Zijing, Rakheja, Shaloo, Lee, Kyusang, Zhu, Wenjuan

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Strong Temperature Effect on the Ferroelectric Properties of CuInP 2 S 6 and Its Heterostructures by Zhao, Zijing, Xu, Kai, Ryu, Hojoon, Zhu, Wenjuan

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Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors by Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J, Maxey, Kirby, O'Brien, Kevin P, Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan, Oni, Adedapo, Putna, Steve, Clendenning, Scott B, Metz, Matthew, Radosavljevic, Marko, Avci, Uygar, Young, Ian A

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Ultra-High‑k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p‑Type High-Performance Transistors by Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J., Maxey, Kirby, O’Brien, Kevin P., Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa Ekin, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan, Oni, Adedapo, Putna, Steve, Clendenning, Scott B., Metz, Matthew, Radosavljevic, Marko, Avci, Uygar, Young, Ian A.

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Nanoscale Devices Based on Two-dimensional and Ferroelectric Materials by Zhao, Zijing, Xu, Kai, Liu, Jialun, Jiang, Wei, Ryu, Hojoon, Rakheja, Shaloo, Low, Tony, Zhu, Wenjuan

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Ferroelectric Tunneling Junctions for Neurosynaptic Computing by Ryu, Hojoon, Wu, Haonan, Rao, Fubo, Zhu, Wenjuan

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Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO by Ryu, Hojoon, Kang, Junzhe, Park, Minseong, Bae, Byungjoon, Zhao, Zijing, Rakheja, Shaloo, Lee, Kyusang, Zhu, Wenjuan

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Content Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing by Zhao, Zijing, Kang, Junzhe, Tunga, Ashwin, Ryu, Hojoon, Shukla, Ankit, Rakheja, Shaloo, Zhu, Wenjuan

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Fibrous cellulose nanoarchitectonics on N-doped Carbon-based Metal-Free catalytic nanofilter for highly efficient advanced oxidation process by Zhu, Wenkai, Kim, Donggyun, Han, Minsu, Jang, Jieun, Choi, Hojoon, Kwon, Goomin, Jeon, Youngho, Yeol Ryu, Du, Lim, Si-Hyung, You, Jungmok, Li, Song, Kim, Jeonghun

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Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell by Bang, Minji, Ha, Jonghyeon, Suh, Minki, Lee, Dabok, Ryu, Minsang, Han, Jin-Woo, Sagong, Hyunchul, Lee, Hojoon, Kim, Jungsik

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