Search Results - SAHAFI, H. F

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  1. 1
    Effect of flow rate on reactive ion etching of GaAs in CH4/H2 plasma

    Effect of flow rate on reactive ion etching of GaAs in CH4/H2 plasma by SAHAFI, H. F, GOLDSPINK, G. F, WEBB, A. P, CARTER, M. A

    Published in Vacuum
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  2. 2
    Effect of flow rate on reactive ion etching of GaAs in Ch sub(4)/H sub(2) plasma

    Effect of flow rate on reactive ion etching of GaAs in Ch sub(4)/H sub(2) plasma by Sahafi, H F, Goldspink, G F, Webb, A P, Carter, M A

    Published in Vacuum
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  3. 3
    Effect of flow rate on reactive ion etching of GaAs in CH 4/H 2 plasma

    Effect of flow rate on reactive ion etching of GaAs in CH 4/H 2 plasma by Sahafi, HF, Goldspink, GF, Webb, AP, Carter, MA

    Published in Vacuum
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  4. 4
    The effect of process parameters on dc self-bias voltage in reactive ion etching of GaAs using CH4/H2

    The effect of process parameters on dc self-bias voltage in reactive ion etching of GaAs using CH4/H2 by Sahafi, H.F., Webb, A.P., Carter, M.A., Goldspink, G.F.

    Published in Microelectronics
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