Self-aligned SiGe NPN transistors with 285 GHz f/MAX/ and 207 GHz f/T/ in a manufacturable technology by Jagannathan, B, Khater, M, Pagette, F, Rieh, J-S, Angell, D, Chen, H, Florkey, J, Golan, F, Greenberg, D R, Groves, R, Jeng, S J, Johnson, J, Mengistu, E, Schonenberg, K T, Schnabel, C M, Smith, P, Stricker, A, Ahlgren, D, Freeman, G

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A 210-GHz f(T) SiGe HBT with a non-self-aligned structure by Jeng, S J, Jagannathan, B, Rieh, J-S, Johnson, J, Schonenberg, K T, Greenberg, D, Stricker, A, Chen, H, Khater, M, Ahlgren, D, Freeman, G, Stein, K, Subbanna, S

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A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications by Nguyen-Ngoc, D., Sunderland, D.A., Ahlgren, D.C., Jeng, S.J., Gilbert, M.M., Malinowski, J.C., Schonenberg, K.T., Stein, K.S., Meyerson, B.S., Harame, D.L.

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Nanoscale characterization of stresses in semiconductor devices by quantitative electron diffraction by Demarest, J., Hull, R., Schonenberg, K. T., Janssens, K. G. F.

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Electron holography of Si:C films and Si:C-based devices by Gribelyuk, M. A., Adam, T. N., Ontalus, V., Ronsheim, P. R., Kimball, L., Schonenberg, K. T.

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Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs by Rieh, J.-S., Khater, M., Schonenberg, K.T., Pagette, F., Smith, P., Adam, T.N., Stein, K., Ahlgren, D., Freeman, G.

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A 210-GHz fT SiGe HBT with a non-self-aligned structure by Jeng, S.J., Jagannathan, B., Rieh, J.-S., Johnson, J., Schonenberg, K.T., Greenberg, D., Stricker, A., Chen, H., Khater, M., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.

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Manufacturability and applications of SiGe HBT technology by Sunderland, D.A., Ahlgren, D.C., Gilbert, M.M., Jeng, S.-J., Malinowski, J.C., Nguyen-Ngoc, D., Schonenberg, K.T., Stein, K.J., Meyerson, B.S., Harame, D.L.

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Application of Electron Holography to Semiconductor Structures and Devices by Gribelyuk, MA, Ontalus, V, Schonenberg, KT, Yuan, J, Adam, TN, Ronsheim, P

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Gate-assisted lateral PNP active load for analog SiGe HBT technology by Sunderland, D.A., Schonenberg, K.T., Stein, K.J., Meyerson, B.S., Harame, D.L., Jeng, S.-J., Nguyen-Ngoc, D., Martin, B., Eld, E.C., Tewksbury, T., Ahlgren, D.C., Gilbert, M.M., Malinowski, J.C.

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A 210-GHz f sub(T) SiGe HBT with a non-self-aligned structure by Jeng, S J, Jagannathan, B, Rieh, J-S, Johnson, J, Schonenberg, K T, Greenberg, D, Stricker, A, Chen, H, Khater, M, Ahlgren, D, Freeman, G, Stein, K, Subbanna, S

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Self-aligned SiGe NPN transistors with 285 GHz f sub(MAX) and 207 GHz f sub(T) in a manufacturable technology by Jagannathan, B, Khater, M, Pagette, F, Rieh, J-S, Angell, D, Chen, H, Florkey, J, Golan, F, Greenberg, DR, Groves, R, Jeng, S J, Johnson, J, Mengistu, E, Schonenberg, K T, Schnabel, C M, Smith, P, Stricker, A, Ahlgren, D, Freeman, G, Stein, K, Subbanna, S

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CMOS gate height scaling by Zhibin Ren, Schonenberg, K.T., Ontalus, V., Lauer, I., Butt, S.A.

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Sige HBT technology with fmax/fT = 350/300 GHz and gate delay below 3.3 ps by KHATER, M, RIEH, J.-S, SCHONENBERG, K. T, SMITH, P, STEIN, K, STRICKER, A, JENG, S.-J, AHLGREN, D, FREEMAN, G, ADAM, T, CHINTHAKINDI, A, JOHNSON, J, KRISHNASAMY, R, MEGHELLI, M, PAGETTE, F, SANDERSON, D, SCHNABEL, C

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SiGe HBTs with cut-off frequency of 350GHz by RIEH, J.-S, JAGANNATHAN, B, KHATER, M, PAGETTE, F, SCHNABEL, C, SMITH, P, STRICKER, A, VAED, K, VOLANT, R, AHLGREN, D, FREEMAN, G, STEIN, K, CHEN, H, SUBBANNA, S, SCHONENBERG, K. T, ANGELL, D, CHINTHAKINDI, A, FLORKEY, J, GOLAN, F, GREENBERG, D, JENG, S.-J

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Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs by Jeng, S.J., Ahlgren, D.C., Berg, G.D., Ebersman, B., Freeman, G., Greenberg, D.R., Malinowski, J., Nguyen-Ngoc, D., Schonenberg, K.T., Stein, K.J., Colavito, D., Longstreet, M., Ronsheim, P., Subbanna, S., Harame, D.L.

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A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications by Nguyen-Ngoc, D., Harame, D.L., Malinowski, J.C., Jeng, S.J., Schonenberg, K.T., Gilbert, M.M., Berg, G.D., Wu, S., Soyuer, M., Tallman, K.A., Stein, K.J., Groves, R.A., Subbanna, S., Colavito, D.B., Sunderland, D.A., Meyerson, B.S.

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Vertebroplasty versus sham procedure for painful acute osteoporotic vertebral compression fractures (VERTOS IV): randomised sham controlled clinical trial by Firanescu, Cristina E, de Vries, Jolanda, Lodder, Paul, Venmans, Alexander, Schoemaker, Marinus C, Smeet, Albert J, Donga, Esther, Juttmann, Job R, Klazen, Caroline A H, Elgersma, Otto E H, Jansen, Frits H, Tielbeek, Alexander V, Boukrab, Issam, Schonenberg, Karen, van Rooij, Willem Jan J, Hirsch, Joshua A, Lohle, Paul N M

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Implementation of a dual cervical spine and blunt cerebrovascular injury assessment pathway for pediatric trauma patients by Schonenberg Llach, Maria, Fishe, Jennifer N., Yorkgitis, Brian K.

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Authors response to reader's letter: Creating an evidence-based pathway for assessing and managing cervical spine and BCV injury in pediatric trauma population (Ref AJEM26745) by Schonenberg Llach, Maria, Fishe, Jennifer N., Yorkgitis, Brian K.

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