Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI by Avenier, G., Fregonese, S., Chevalier, P., Bustos, J., Saguin, F., Schwartzmann, T., Maneux, C., Zimmer, T., Chantre, A.

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Band-to-band tunneling in vertically scaled SiGe:C HBTs by Lagarde, D., Chevalier, P., Schwartzmann, T., Chantre, A.

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A selective epitaxy collector module for high-speed Si/SiGe:C HBTs by Geynet, B., Chevalier, P., Brossard, F., Vandelle, B., Schwartzmann, T., Buczko, M., Avenier, G., Dutartre, D., Dambrine, G., Danneville, F., Chantre, A.

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Development of the WHOQOL disabilities module by Power, M. J., Green, A. M.

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New basis for spin operators adapted to the study of hyperfine effects in polyatomic molecules by Schwartzmann, T., Michelot, F.

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The Attitudes to Disability Scale (ADS): development and psychometric properties by Power, M. J., Green, A. M.

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Perceptions of persons with Parkinson's disease, family and professionals on quality of life: an international focus group study by Den Oudsten, Brenda L., Lucas-Carrasco, Ramona, Green, Ann M., Whoqol-Dis Group, The

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The Quality of Care and Support (QOCS) for people with disability scale: Development and psychometric properties by Lucas-Carrasco, Ramona, Eser, Erhan, Hao, Yuantao, McPherson, Kathryn M., Green, Ann, Kullmann, Lajos

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A spice model for predicting static thermal coupling between bipolar transistors by Beckrich, H., Schwartzmann, T., Celif, D., Zimmer, T.

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Coupled Approach for Reliability Study of Fully Self Aligned SiGe: C 250GHz HBTs by Diop, M., Revil, N., Marin, M., Monsieur, F., Schwartzmann, T., Ghibaudo, G.

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Coupled Approach for Reliability Study of Fully Self Aligned SiGe:C 250GHz HBTs by Diop, M., Revil, N., Marin, M., Monsieur, F., Schwartzmann, T., Ghibaudo, G.

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A self-aligned vertical HBT for thin SOI SiGeC BiCMOS by Avenier, G., Schwartzmann, T., Chevalier, P., Vandelle, B., Rubaldo, L., Dutartre, D., Boissonnet, L., Saguin, F., Pantel, R., Fregonese, S., Maneux, C., Zimmer, T., Chantre, A.

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New Method for Oxide Capacitance Extraction by Raya, C., Schwartzmann, T., Chevalier, P., Pourchon, F., Celi, D., Zimmer, T.

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Simulation of surface engineering for ultra shallow junction formation of PMOS for the 90nm CMOS technology node and beyond by Bonnouvrier, J., Lenoble, D., Robilliart, E., Schwartzmann, T., Jaouen, H.

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Prospects for Complementary SiGeC BiCMOS on Thin-Film SOI by Chantre, Alain, Avenier, Gregory, Boissonnet, Laurence, Borot, Gael, Bouillon, Pierre, Brossard, Florence, Chevalier, Pascal, Deleglise, Florence, Dutartre, Didier, Duvernay, Julien, Fregonese, Sebastien, Judong, Fabienne, Pantel, Roland, Perrotin, Andre, Rauber, Bruno, Rubaldo, Laurent, Saguin, Fabienne, Schwartzmann, Thierry, Vandelle, Benoit, Zimmer, Thomas

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An experimental and simulation study of pnp Si/SiGeC HBTs using box-like Ge profiles by Duvernay, J., Borot, G., Chevalier, P., Dutartre, D., Pantel, R., Rubaldo, L., Schwartzmann, T., Vandelle, B., Chantre, A.

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250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector by Chevalier, P., Raya, C., Geynet, B., Pourchon, F., Judong, F., Saguin, F., Schwartzmann, T., Pantel, R., Vandelle, B., Rubaldo, L., Avenier, G., Barbalat, B., Chantre, A.

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Deep trench isolation effect on self-heating and RF performances of SiGeC HBTs by Barbalat, B., Schwartzmann, T., Chevalier, P., Jagueneau, T., Vandelle, B., Rubaldo, L., Saguin, F., Zerounian, N., Aniel, F., Chantre, A.

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100GHz SiGe:C HBTs using non selective base epitaxy by Martinet, B., Baudry, H., Kermarrec, O., Campidelli, Y., Laurens, M., Marty, M., Schwartzmann, T., Monroy, A., Bensahel, D., Chantre, A.

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High-Voltage HBTs Compatible with High-Speed SiGe BiCMOS Technology by Geynet, B., Chevalier, P., Chouteau, S., Avenier, G., Schwartzmann, T., Gloria, D., Dambrine, G., Danneville, F., Chantre, A.

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