Search Results - SHAOFENG YU

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  1. 21
    Atomic-Layer-Deposited Al 2 O 3 Layer Inserted in SiO 2 /HfO 2 Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device

    Atomic-Layer-Deposited Al 2 O 3 Layer Inserted in SiO 2 /HfO 2 Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device by Lv, Yu-Dong, Shen, Lei, Li, Yu-Chun, Shi, Cai-Yu, Huang, Zi-Ying, Yu, Xing, Zhu, Xiao-Na, Lu, Hong-Liang, Yu, Shaofeng, Zhang, David Wei

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  2. 22
    Atomic-Layer-Deposited Al2O3 Layer Inserted in SiO2/HfO2 Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device

    Atomic-Layer-Deposited Al2O3 Layer Inserted in SiO2/HfO2 Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device by Lv, Yu-Dong, Shen, Lei, Li, Yu-Chun, Shi, Cai-Yu, Huang, Zi-Ying, Yu, Xing, Zhu, Xiao-Na, Lu, Hong-Liang, Yu, Shaofeng, Zhang, David Wei

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  3. 23
    Effect of AnnealingAtomic Rearrangement on ElectrochemicalPerformance of Pd-NiCatalyst

    Effect of AnnealingAtomic Rearrangement on ElectrochemicalPerformance of Pd-NiCatalyst by Lu, Liquan, Yu, Shaofeng, Yue, Xiuping, Wang, Jing, Liang, Meisheng, Gao, Lizhen, Yan, Shaohui

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  4. 24
    Erratum: Symmetry of ferroelectric switching and domain walls in hafnium dioxide [Phys. Rev. B 106, 064104 (2022)]

    Erratum: Symmetry of ferroelectric switching and domain walls in hafnium dioxide [Phys. Rev. B 106, 064104 (2022)] by Zhao, Guo-Dong, Liu, Xingen, Ren, Wei, Zhu, Xiaona, Yu, Shaofeng

    Published in Physical review. B
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  5. 25
    Symmetry of ferroelectric switching and domain walls in hafnium dioxide

    Symmetry of ferroelectric switching and domain walls in hafnium dioxide by Zhao, Guo-Dong, Liu, Xingen, Ren, Wei, Zhu, Xiaona, Yu, Shaofeng

    Published in Physical review. B
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  6. 26
    Electrochemical Performance of the Pd/C Catalyst Synthesized by Polyol Process

    Electrochemical Performance of the Pd/C Catalyst Synthesized by Polyol Process by Yu, Shaofeng, Han, Qiong, Yang, Yingjia, Ma, Xuli, Gao, Lizhen, Yan, Shaohui, Wu, Yucheng, Lu, Liquan

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  7. 27
    Strained-Si-strained-SiGe dual-channel layer structure as CMOS substrate for single workfunction metal-gate technology

    Strained-Si-strained-SiGe dual-channel layer structure as CMOS substrate for single workfunction metal-gate technology by Shaofeng Yu, Jongwan Jung, Hoyt, J.L., Antoniadis, D.A.

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  8. 28
    Mobility enhancement in dual-channel P-MOSFETs

    Mobility enhancement in dual-channel P-MOSFETs by Jongwan Jung, Shaofeng Yu, Lee, M.L., Hoyt, J.L., Fitzgerald, E.A., Antoniadis, D.A.

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  9. 29
    Tradeoff between mobility and subthreshold characteristics in dual-channel heterostructure n- and p-MOSFETs

    Tradeoff between mobility and subthreshold characteristics in dual-channel heterostructure n- and p-MOSFETs by Jongwan Jung, Chleirigh, C.N., Shaofeng Yu, Olubuyide, O.O., Hoyt, J., Antoniadis, D.A.

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  10. 30
    A Statistical Model of Noises at Input Port of Inverter and its Coupling to Low Voltage Cable on Fuel Cell Bus

    A Statistical Model of Noises at Input Port of Inverter and its Coupling to Low Voltage Cable on Fuel Cell Bus by Wei Li, Shaofeng Yu, Bo Zhang, Jinliang He, Yong Huang

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  11. 31
    Polymer-mediated mesoscale mineralization

    Polymer-mediated mesoscale mineralization by Chen, ShaoFeng, Yu, ShuHong

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  12. 32
    Techniques to improve read noise margin and write margin for bit-cell of 14nm FINFET node

    Techniques to improve read noise margin and write margin for bit-cell of 14nm FINFET node by Zhang, Gong, Li, Yu, Yu, Shaofeng

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  13. 33
    Electromagnetic Conductive Interference Characteristics in Driving System of Fuel Cell Bus

    Electromagnetic Conductive Interference Characteristics in Driving System of Fuel Cell Bus by Jinliang He, Bo Zhang, Shaofeng Yu, Wei Li, Rong Zeng, Yong Huang, Jae-bok Lee, Sug-hun Chang

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  14. 34
    Circuit-level ESD protection simulation using behavior models in 28nm CMOS

    Circuit-level ESD protection simulation using behavior models in 28nm CMOS by Feilong Zhang, Chenkun Wang, Fei Lu, Qi Chen, Cheng Li, Wang, Albert, Daguang Li, Shaofeng Yu, Chengyu Zhu, Tianshen Tang, Yuhua Cheng

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  15. 35
    New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits

    New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits by Jibin Zou, Runsheng Wang, Shaofeng Guo, Mulong Luo, Zhuoqing Yu, Xiaobo Jiang, Pengpeng Ren, Jianping Wang, Jinhua Liu, Jingang Wu, Waisum Wong, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, Yangyuan Wang, Ru Huang

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  16. 36
    Distribution and Characteristic of the Disturbances in the Driving System of a Fuel Cell Bus

    Distribution and Characteristic of the Disturbances in the Driving System of a Fuel Cell Bus by Bo Zhang, Jinliang He, Shaofeng Yu, Wei Li, Rong Zeng, Yong Huang, Jae-bok Lee, Sug-hun Chang

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  17. 37
    A testing research on the effect of conductive backfill on reducing grounding resistance under lightning

    A testing research on the effect of conductive backfill on reducing grounding resistance under lightning by Wentang Hu, Shaofeng Yu, Rui Cheng, Jinliang He

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  18. 38
    Deep insights into dielectric breakdown in tunnel FETs with awareness of reliability and performance co-optimization

    Deep insights into dielectric breakdown in tunnel FETs with awareness of reliability and performance co-optimization by Qianqian Huang, Rundong Jia, Jiadi Zhu, Zhu Lv, Jiaxin Wang, Cheng Chen, Yang Zhao, Runsheng Wang, Weihai Bu, Wenbo Wang, Jin Kang, Kelu Hua, Hanming Wu, Shaofeng Yu, Yangyuan Wang, Ru Huang

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  19. 39
    New insights into the design for end-of-life variability of NBTI in scaled high-κ/metal-gate Technology for the nano-reliability era

    New insights into the design for end-of-life variability of NBTI in scaled high-κ/metal-gate Technology for the nano-reliability era by Pengpeng Ren, Runsheng Wang, Zhigang Ji, Peng Hao, Xiaobo Jiang, Shaofeng Guo, Mulong Luo, Meng Duan, Zhang, Jian F., Jianping Wang, Jinhua Liu, Weihai Bu, Jingang Wu, Waisum Wong, Yu Shaofeng, Hanming Wu, Shiuh-Wuu Lee, Nuo Xu, Ru Huang

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  20. 40
    Adding the missing time-dependent layout dependency into device-circuit-layout co-optimization - New findings on the layout dependent aging effects

    Adding the missing time-dependent layout dependency into device-circuit-layout co-optimization - New findings on the layout dependent aging effects by Pengpeng Ren, Xiaoqing Xu, Peng Hao, Junyao Wang, Runsheng Wang, Ming Li, Jianping Wang, Weihai Bu, Jingang Wu, Waisum Wong, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, Pan, David Z., Ru Huang

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