Effects of MgO tunnel barrier thickness on magnetohysteresisin perpendicularly magnetized magnetic tunnel junctionsof Gd Fe Co ∕ Fe Co ∕ Mg O ∕ Fe Co ∕ Tb Fe ∕ Co by Li, Simon C., Chen, T.-J., Chang, C.-H., Liao, K.-A., Hou, C.-K., Wu, Te-Ho

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Comprehensive Modeling of Superluminescent Light-Emitting Diodes by Li, Z.Q., Li, Z.

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Characterization of sequential optimization strategies in concurrent product and process design: A dual-team approach by Chen, Li, Li, Simon

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Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate by Yang Sheng, Chang Sheng Xia, Li, Z. M. S., Li Wen Cheng

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A high efficiency 0.5W BTL class-D audio amplifier with RWDM technique by Li, Simon C., Lin, Vincent Chia-Chang

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Structure of optimal privacy-preserving policies in smart-metered systems with a rechargeable battery by Li, Simon, Khisti, Ashish, Mahajan, Aditya

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Differential operators on the superline, Berezinians, and Darboux transformations by Li, Simon, Shemyakova, Ekaterina, Voronov, Theodore

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Impacts of Backside Insulation on the Dynamic On-Resistance of Lateral p-GaN HEMTs-on-Si by Yu-Xuan, Wang, Mao-Chou, Tai, Ting-Chang, Chang, Wei-Chen, Huang, Wan, Zeyu, Li, Simon, Sze, Simon, Xia, Guangrui

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Needs-Centric Searching and Ranking Based on Customer Reviews by Lee, T.Y., Li, S., Ran Wei

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Tunneling magnetoresistance of magnetic tunneling junction cell measured by conducting atomic force microscopy with ramping dc bias voltage rate by Shu, Min-Fong, Canizo-Cabrera, A., Hsu, Chih-Cheng, Chen, C. C., Wu, J. C., Li, Simon C., Yang, Chao-Chen, Wu, Te-ho

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The magnetic characteristics of perpendicular magnetic tunnel junction with MgO and Al–O oxidation layers in various thickness by Chen, Tzu-Jung, Canizo-Cabrera, A., Chang, Che-Hao, Liao, Kuo-An, Li, Simon C., Hou, Chun-Kan, Wu, Te-ho

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bia-binder: A web-native cloud compute service for the bioimage analysis community by Russell, Craig T, Jean-Marie Burel, Athar, Awais, Li, Simon, Sarkans, Ugis, Swedlow, Jason, Alvis Brazma, Hartley, Matthew, Uhlmann, Virginie

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Chemical kinetics and design of gas inlets for III–V growth by MOVPE in a quartz showerhead reactor by Li, Zhi-qiang, Zhou, Vivian, Li, Simon, Sudersena Rao, T., Jiang, W.Y., Watkins, S.P.

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Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model by Chang Sheng Xia, Li, Z. M. S., Yang Sheng, Li Wen Cheng, Wei Da Hu, Wei Lu

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Erratum to: Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate by Xia, Chang Sheng, Li, Z. M. Simon, Sheng, Yang, Cheng, Li Wen

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2D modeling of si RCCs with laser-fired contact and surface texture by Xiao, Y.G., Sheng, Y., Zhou, Y.J., Lestrade, M., Li, Z.Q., Li, Z.

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Effects of MgO tunnel barrier thickness on magnetohysteresis in perpendicularly magnetized magnetic tunnel junctions of GdFeCo∕FeCo∕MgO∕FeCo∕TbFe∕Co by Li, Simon C., Chen, T.-J., Chang, C.-H., Liao, K.-A., Hou, C.-K., Wu, Te-Ho

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LV/LP CMOS four-quadrant analog multiplier cell in modified bridged-triode scheme (low-voltage-operation /low-power-consumption) by Li, S C

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Design Considerations of Biaxially Tensile-Strained Germanium-on-Silicon Lasers by Li, Xiyue, Li, Zhiqiang, Li, Simon, Chrostowski, Lukas, Xia, Guangrui

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Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD by Tao, Zhikuo, Zhang, Rong, Xiu, Xiangqian, Cui, Xugao, Li, Li, Li, Xin, Xie, ZiLi, Zheng, Youdou, Zheng, Rongkun, Ringer, Simon P

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