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High-Temperature Piezoresistance of Silicon Carbide and Gallium Nitride Materials
by
Sugiura, Takaya
,
Takahashi, Naoki
,
Sakota, Ryohei
,
Matsuda, Kazunori
,
Nakano, Nobuhiko
Published in
IEEE journal of the Electron Devices Society
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Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides
by
Sugiura, Takaya
,
Takahashi, Naoki
,
Sakota, Ryohei
,
Matsuda, Kazunori
,
Nakano, Nobuhiko
Published in
IEEE journal of the Electron Devices Society
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Numerical simulation of the piezoresistive effect of βGa2O3 in the direction
by
Takahashi, Naoki
,
Sugiura, Takaya
,
Sakota, Ryohei
,
Nakano, Nobuhiko
Published in
Japanese Journal of Applied Physics
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Numerical simulation of the piezoresistive effect of βGa 2 O 3 in the direction
by
Takahashi, Naoki
,
Sugiura, Takaya
,
Sakota, Ryohei
,
Nakano, Nobuhiko
Published in
Japanese Journal of Applied Physics
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Ieee Journal Of The Electron Devices Society
2 results
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Japanese Journal Of Applied Physics
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Science & Technology
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Coefficients
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Device Simulation
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Engineering
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Engineering, Electrical & Electronic
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Ionization
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Mathematical Models
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Piezoresistance
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Piezoresistive Effect
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Piezoresistivity
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Silicon Carbide
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Technology
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Temperature
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Temperature Dependence
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Wide Band-Gap Semiconductors
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3C-Sic
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Aluminum
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Aluminum Acceptor
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Doping
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Gallium Nitrides
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Ieee Xplore Open Access Journals
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Road: Directory Of Open Access Scholarly Resources
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