Search Results - Saladukha, Dzianis

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  1. 1
    Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

    Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires by Biswas, Subhajit, Doherty, Jessica, Saladukha, Dzianis, Ramasse, Quentin, Majumdar, Dipanwita, Upmanyu, Moneesh, Singha, Achintya, Ochalski, Tomasz, Morris, Michael A., Holmes, Justin D.

    Published in Nature communications
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  2. 2
    Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires

    Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires by Doherty, Jessica, Biswas, Subhajit, Saladukha, Dzianis, Ramasse, Quentin, Tara Shankar Bhattacharya, Singha, Achintya, Ochalski, Tomasz J, Holmes, Justin D

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  3. 3
    Influence of pH adjustment on physicochemical properties of microfiltration retentates of skim milk and rehydration properties of resulting powders

    Influence of pH adjustment on physicochemical properties of microfiltration retentates of skim milk and rehydration properties of resulting powders by Panthi, Ram R., Bot, Francesca, Shibu, Sini N., Saladukha, Dzianis, Ochalski, Tomasz J., O'Mahony, James A.

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  4. 4
    Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices

    Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices by Clavel, Michael, Saladukha, Dzianis, Goley, Patrick S, Ochalski, Tomasz J, Murphy-Armando, Felipe, Bodnar, Robert J, Hudait, Mantu K

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  5. 5
    Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure

    Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure by Hudait, Mantu K, Murphy-Armando, Felipe, Saladukha, Dzianis, Clavel, Michael B, Goley, Patrick S, Maurya, Deepam, Bhattacharya, Shuvodip, Ochalski, Tomasz J

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  6. 6
    Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

    Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings by Papatryfonos, Konstantinos, Saladukha, Dzianis, Merghem, Kamel, Joshi, Siddharth, Lelarge, Francois, Bouchoule, Sophie, Kazazis, Dimitrios, Guilet, Stephane, Le Gratiet, Luc, Ochalski, Tomasz J., Huyet, Guillaume, Martinez, Anthony, Ramdane, Abderrahim

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  7. 7
    Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowiresElectronic supplementary information (ESI) available: EDX analysis of GeSn nanowires, additional TEM images and analysis, detail on the nanoparticle catalysts and photoluminescence from 7.4 at% Sn containing GeSn nanowire. See DOI: 10.1039/c8tc02423e

    Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowiresElectronic supplementary information (ESI) available: EDX analysis of GeSn nanowires, addition... by Doherty, Jessica, Biswas, Subhajit, Saladukha, Dzianis, Ramasse, Quentin, Bhattacharya, Tara Shankar, Singha, Achintya, Ochalski, Tomasz J, Holmes, Justin D

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  8. 8
    Influence of growth kinetics on Sn incorporation in direct band gap Ge 1−x Sn x nanowires

    Influence of growth kinetics on Sn incorporation in direct band gap Ge 1−x Sn x nanowires by Doherty, Jessica, Biswas, Subhajit, Saladukha, Dzianis, Ramasse, Quentin, Bhattacharya, Tara Shankar, Singha, Achintya, Ochalski, Tomasz J., Holmes, Justin D.

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  9. 9
    Non-equilibrium induction of tin in germanium: towards direct bandgap Ge(1-x)Sn(x) nanowires

    Non-equilibrium induction of tin in germanium: towards direct bandgap Ge(1-x)Sn(x) nanowires by Biswas, Subhajit, Doherty, Jessica, Saladukha, Dzianis, Ramasse, Quentin, Majumdar, Dipanwita, Upmanyu, Moneesh, Singha, Achintya, Ochalski, Tomasz, Morris, Michael A, Holmes, Justin D

    Published in Nature communications
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