Round-robin test of the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon by Tajima, Michio, Samata, Shuichi, Nakagawa, Satoko, Oriyama, Jun, Ishihara, Noriyuki

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Extension of the scope of the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon by Tajima, Michio, Samata, Shuichi, Nakagawa, Satoko, Ishigaki, Hiroki, Ishihara, Noriyuki

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Influence of silicon wafer surface roughness on semiconductor device characteristics by Mori, Keiichiro, Samata, Shuichi, Mitsugi, Noritomo, Teramoto, Akinobu, Kuroda, Rihito, Suwa, Tomoyuki, Hashimoto, Keiichi, Sugawa, Shigetoshi

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Corrigendum: “Calibration curve for the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon” [Jpn. J. Appl. Phys. 60, 026501 (2021)] by Tajima, Michio, Samata, Shuichi, Nakagawa, Satoko, Shinozuka, Yu, Oriyama, Jun, Ishihara, Noriyuki

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New equations to calculate carrier recombination lifetime of silicon epitaxial layer, based on open circuit voltage decay method by Sasaki, Shun, Mitsugi, Noritomo, Samata, Shuichi, Manabe, Wataru, Gollapudi, Srikanth, Tsukuda, Masanori, Omura, Ichiro

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Calibration curve for the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon by Tajima, Michio, Samata, Shuichi, Nakagawa, Satoko, Shinozuka, Yu, Oriyama, Jun, Ishihara, Noriyuki

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Evaluation of thermally activated defects behaviors in nitrogen-doped Czochralski silicon single crystals using deep level transient spectroscopy by Kajiwara, Kaoru, Eriguchi, Kazutaka, Fusegawa, Kazuhiro, Mitsugi, Noritomo, Samata, Shuichi, Torigoe, Kazuhisa, Harada, Kazuhiro, Hourai, Masataka, Nishizawa, Shin-ichi

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Nitrogen-Doped Czochralski Silicon Wafers as Materials for Conventional and Scaled Insulated Gate Bipolar Transistors by Kajiwara, Kaoru, Eriguchi, Kazutaka, Fusegawa, Kazuhiro, Mitsugi, Noritomo, Samata, Shuichi, Torigoe, Kazuhisa, Harada, Kazuhiro, Hourai, Masataka, Nishizawa, Shin-Ichi

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Virtual fab technology utility simulation and its application to 300mm CR facility design and energy reduction by Masuda, T., Samata, S., Mikata, Y.

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A new cell structure with a spread source/drain (SSD) MOSFET and a cylindrical capacitor for 64-Mb DRAM's by Yamada, T., Samata, S., Takato, H., Matsushita, Y., Hieda, K., Nitayama, A., Horiguchi, F., Masuoka, F.

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Preparation of large-scale 2D zeolite crystal array structures to achieve optical functionality by Hashimoto, Shuichi, Samata, Kazuo, Shoji, Tatsuya, Taira, Nobuyuki, Tomita, Takuro, Matsuo, Shigeki

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