4H-SiC power devices for use in power electronic motor control by Casady, J.B, Agarwal, A.K, Seshadri, S, Siergiej, R.R, Rowland, L.B, MacMillan, M.F, Sheridan, D.C, Sanger, P.A, Brandt, C.D

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Status of SiC power devices at Northrop Grumman by Agarwal, A.K, Seshadri, S, Casady, J.B, Mani, S.S, MacMillan, M.F, Saks, Nelson, Burk, A.A, Augustine, G, Balakrishna, V, Sanger, P.A, Brandt, C.D, Rodrigues, R

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Electrical testing of large scale IR&D dummy coil for TPX magnet insulation design verification by Roach, J.F., Sanger, P.A., Hartman, D., Miller, J.R.

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TPX magnet helium stub penetration and joining by Sanger, P.A., Hillenbrand, R.J., Swartzback, G.W., Urban, W.M., Salkin, J.T.

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Conduit distortion of the ITER CS conductor due to bending by Sanger, P.A., Hordubay, T.D., Singh, S.K.

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Turn-off characteristics of 1000 V SiC gate-turn-off thyristors by Seshadri, S., Casady, J.B., Agarwal, A.K., Siergiej, R.R., Rowland, L.B., Sanger, P.A., Brandt, C.D., Barrow, J., Piccone, D., Rodrigues, R., Hansen, T.

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Silicon carbide power MOSFET technology by Casady, J.B., Agarwal, A.K., Rowland, L.B., Seshadri, S., Siergiej, R.R., Sheridan, D.C., Mani, S., Sanger, P.A., Brandt, C.D.

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Status of the SSC superconducting magnets by Bush, T.O., Allen, D.C., Coombes, R.W., Malnar, R.J., Sanger, P.A., Tompkins, J.C.

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1000 V 4H-SiC gate turn off (GTO) thyristor by Siergiej, R.R., Casady, J.B., Agarwal, A.K., Rowland, L.B., Seshadri, S., Mani, S., Sanger, P.A., Brandt, C.D.

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P-047 Combined cytogenetic and FISH studies facilitate abnormality detection in myelodysplastic syndromes: A comprehensive analysis of 1132 consecutive specimens by Dave, B.J, Jing, H, Sanmann, J.N, Althof, P.A, Wiggins, M.L, Higgins, C.M, Sanger, W.G, Akhtari, M

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