Thin SiC and Gan-Based Films and Structures: Production and Properties by Altukhov, V.I., Sankin, A.V., Dadasheva, Z.I.

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SCHOTKY BARRIER HEIGHT AND CALCULATION OF VOLTAGE-CURRENT CHARACTERISTICS OF Al/n-[.sub.x] DIODES AND 4H-SiC HETEROJUNCTIONS by Altukhov, V.I, Sankin, A.V, Antonov, V.F, Filipova, S.V, Mityugova, O.A

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Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Tr... by Altukhov, V. I., Sankin, A. V., Sigov, A. S., Sysoev, D. K., Yanukyan, E. G., Filippova, S. V.

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Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide by Altuhov, V. I., Kasyanenko, I. S., Sankin, A. V., Bilalov, B. A., Sigov, A. S.

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Terahertz-emission generation caused by new effects in the 6H-SiC natural superlattice by Sankin, V. I., Andrianov, A. V., Zakhar’in, A. O., Petrov, A. G.

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The Wannier-Stark effect and N-shape volt-ampere characteristics in a superlattice of 6H-silicon carbide by Sankin, V.I., Naumov, A.V.

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