Search Results - Sapelkin, AV

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  1. 1
    Interaction of B50 rat hippocampal cells with stain-etched porous silicon

    Interaction of B50 rat hippocampal cells with stain-etched porous silicon by Sapelkin, Andrei V., Bayliss, Susan C., Unal, Bayram, Charalambou, Amanda

    Published in Biomaterials
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  2. 2
    On the origin of the 2.2–2.3 eV photoluminescence from chemically etched germanium

    On the origin of the 2.2–2.3 eV photoluminescence from chemically etched germanium by Kartopu, G, Bayliss, S.C, Karavanskii, V.A, Curry, R.J, Turan, R, Sapelkin, A.V

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  3. 3
    Pressure-induced crossover between diffusive and displacive mechanisms of phase transitions in single-crystalline alpha-GeO2

    Pressure-induced crossover between diffusive and displacive mechanisms of phase transitions in single-crystalline alpha-GeO2 by Brazhkin, V V, Lyapin, A G, Voloshin, R N, Popova, S V, Tat'yanin, E V, Borovikov, N F, Bayliss, S C, Sapelkin, A V

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  4. 4
    High-Pressure High-Temperature Studies of Structural Ordering in GaSb

    High-Pressure High-Temperature Studies of Structural Ordering in GaSb by Vanpeteghem, C.B., Nelmes, R.J., Allan, D.R., McMahon, M.I., Sapelkin, A.V., Bayliss, S.C.

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  5. 5
    In situ EXAFS, X-ray diffraction and photoluminescence for high-pressure studies

    In situ EXAFS, X-ray diffraction and photoluminescence for high-pressure studies by Sapelkin, Andrei V., Bayliss, Sue C., Russell, Dean, Clark, Simon M., Dent, Andy J.

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  6. 6
    The preparation and characterisation of gallium nitride using the Hi-Prexx facility

    The preparation and characterisation of gallium nitride using the Hi-Prexx facility by Russell, D., Bayliss, S.C., Sapelkin, A.V., Clark, S.M., Dent, A.

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  7. 7
    Anisotropic Nanoclustered Carbon Phases Prepared from Fullerite C 60 Under Non‐hydrostatic High Pressure

    Anisotropic Nanoclustered Carbon Phases Prepared from Fullerite C 60 Under Non‐hydrostatic High Pressure by Lyapin, A. G., Mukhamadiarov, V. V., Brazhkin, V. V., Kondrin, M. V., Popova, S. V., Tatyanin, Ye. V., Bayliss, S. C., Sapelkin, A. V.

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  8. 8
    Nature of semiconductor-to-metal transition and volume properties of bulk tetrahedral amorphous GaSb and GaSb-Ge semiconductors under high pressure

    Nature of semiconductor-to-metal transition and volume properties of bulk tetrahedral amorphous GaSb and GaSb-Ge semiconductors under high pressure by Sidorov, VA, Brazhkin, VV, Khvostantsev, LG, Lyapin, AG, Sapelkin, AV, Tsiok, OB

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  9. 9
    Structure of bulk amorphous GaSb: A temperature-dependent EXAFS study

    Structure of bulk amorphous GaSb: A temperature-dependent EXAFS study by Sapelkin, A. V., Bayliss, S. C., Lyapin, A. G., Brazhkin, V. V., Dent, A. J.

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  10. 10
    Pressure-induced distortion of the amorphous tetrahedral network in a-GaSb: Direct evidence from EXAFS

    Pressure-induced distortion of the amorphous tetrahedral network in a-GaSb: Direct evidence from EXAFS by Lyapin, AG, Brazhkin, VV, Bayliss, SC, Sapelkin, AV, Itié, JP, Polian, A, Clark, SM

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  11. 11
    Phase transformations and the nature of the semiconductor-to-metal transition in bulk a-GaSb and a-(Ge2)1-x(GaSb)x semiconductors under high pressure

    Phase transformations and the nature of the semiconductor-to-metal transition in bulk a-GaSb and a-(Ge2)1-x(GaSb)x semiconductors under high pressure by Brazhkin, VV, Lyapin, AG, Khvostantsev, LG, Sidorov, VA, Tsiok, OB, Bayliss, SC, Sapelkin, AV, Clark, SM

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