Search Results - Sasaki, K. R. A.

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  1. 1
    Influence of underlap on UTBB SOI MOSFETs in dynamic threshold mode

    Influence of underlap on UTBB SOI MOSFETs in dynamic threshold mode by Sasaki, K. R. A., Aoulaiche, M., Simoen, E., Claeys, C., Martino, J. A.

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  2. 2
    An enzymatic glucose biosensor using the BESOI MOSFET

    An enzymatic glucose biosensor using the BESOI MOSFET by Yojo, L.S., Rangel, R.C., Duarte, P.H., Sasaki, K.R.A., Martino, J.A.

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  3. 3
    Optimization of a nanoribbon charge-based biosensor using gateless BESOI pMOSFET structure

    Optimization of a nanoribbon charge-based biosensor using gateless BESOI pMOSFET structure by Sasaki, K.R.A., Rangel, R.C., Yojo, L.S., Martino, J.A.

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  4. 4
    Study of SOI MOSFET Reconfigurable Transistor for Biosensing Application

    Study of SOI MOSFET Reconfigurable Transistor for Biosensing Application by Yojo, L. S., Rangel, R. C., Sasaki, K. R. A., Martino, J. A.

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  5. 5
    Study of ΒΕ SOI MOSFET Reconfigurable Transistor for Biosensing Application

    Study of ΒΕ SOI MOSFET Reconfigurable Transistor for Biosensing Application by Yojo, L. S., Rangel, R. C., Sasaki, K. R. A., Martino, J. A.

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  6. 6
    Nanoribbon charge-based biosensor using gateless UTBB BESOI pMOSFET

    Nanoribbon charge-based biosensor using gateless UTBB BESOI pMOSFET by Sasaki, K. R. A., Range, R. C., Yojo, L. S., Martino, J. A.

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  7. 7
    Enhanced dynamic threshold voltage UTBB SOI nMOSFETs

    Enhanced dynamic threshold voltage UTBB SOI nMOSFETs by Sasaki, K.R.A., Manini, M.B., Simoen, E., Claeys, C., Martino, J.A.

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  8. 8
    Impact of the Extension Region Concentration on the UTBOX 1T-FBRAM

    Impact of the Extension Region Concentration on the UTBOX 1T-FBRAM by Sasaki, K. R. A., Almeida, L. M., Martino, J. A.

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  9. 9
    The Generation Rate Analysis of Different S/D Junction Engineering in Scaled UTBOX 1T-DRAM

    The Generation Rate Analysis of Different S/D Junction Engineering in Scaled UTBOX 1T-DRAM by Nicoletti, T., Sasaki, K. R. A., dos Santos, S. D., Martino, J. A., Aoulaiche, M., Simoen, E., Claeys, C.

    Published in ECS transactions
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  10. 10
    Semiconductor Film Bandgap Influence on Retention Time of UTBOX SOI 1T-FBRAM

    Semiconductor Film Bandgap Influence on Retention Time of UTBOX SOI 1T-FBRAM by Sasaki, Katia Regina Akemi, Nissimoff, Albert, Almeida, Luciano Mendes, Aoulaiche, Marc, Simoen, Eddy, Claeys, Cor, Martino, Joao Antonio

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  11. 11
    Tradeoff between the transistor reconfigurable technology and the zero-temperature-coefficient (ZTC) bias point on BESOI MOSFET

    Tradeoff between the transistor reconfigurable technology and the zero-temperature-coefficient (ZTC) bias point on BESOI MOSFET by Sasaki, K.R.A., Rangel, R.C., Yojo, L.S., Martino, J.A.

    Published in Microelectronics
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  12. 12
    Analysis of UTBOX 1T-DRAM Memory Cell at High Temperatures

    Analysis of UTBOX 1T-DRAM Memory Cell at High Temperatures by Almeida, Luciano M., Sasaki, Katia R., Aoulaiche, Marc, Simoen, Eddy, Claeys, Cor, Martino, João A.

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  13. 13
    Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications

    Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications by Sasaki, K.R.A., Nicoletti, T., Almeida, L.M., dos Santos, S.D., Nissimoff, A., Aoulaiche, M., Simoen, E., Claeys, C., Martino, J.A.

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  14. 14
    The activation energy dependence on the electric field in UTBOX SOI FBRAM devices

    The activation energy dependence on the electric field in UTBOX SOI FBRAM devices by Nicoletti, T., Santos, S. D., Sasaki, K. R. A., Martino, J. A., Aoulaiche, M., Simoen, E., Claeys, C.

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  15. 15
    Back Enhanced (BE) SOI MOSFET under non-conventional bias conditions

    Back Enhanced (BE) SOI MOSFET under non-conventional bias conditions by Yojo, L. S., Rangel, R. C., Sasaki, K. R. A., Martino, J. A.

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  16. 16
    Thin Si channel Back Enhanced (BE) SOI pMOSFET Photodetector under different bias conditions

    Thin Si channel Back Enhanced (BE) SOI pMOSFET Photodetector under different bias conditions by Padovese, J.A., Rangel, R.C., Sasaki, K.R.A., Martino, J.A.

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  17. 17
    Enhanced dynamic threshold UTBB SOI at high temperature

    Enhanced dynamic threshold UTBB SOI at high temperature by Sasaki, K. R. A., Martino, J. A., Aoulaiche, M., Simoen, E., Claeys, C.

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  18. 18
    Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs

    Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs by Sasaki, K. R. A., Manini, M. B., Martino, J. A., Aoulaiche, M., Simoen, E., Witters, L., Claeys, C.

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  19. 19
    Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation

    Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation by Sasaki, K. R. A., Almeida, L. M., Martino, J. A., Aoulaiche, M., Simoen, E., Claeys, C.

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  20. 20
    Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices

    Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices by Almeida, L. M., Aoulaiche, M., Sasaki, K. R. A., Nicoletti, T., de Andrade, M. G. C., Collaert, N., Simoen, E., Claeys, C., Martino, J. A., Jurczak, M.

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