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Impact of RF stress on different topologies of 100 nm X-band robust GaN LNA
by
Pinault, B.
,
Tartarin, J.G.
,
Saugnon, D.
,
Leblanc, R.
Published in
Microelectronics and reliability
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Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging
by
Tartarin, J.G.
,
Lazar, O.
,
Saugnon, D.
,
Lambert, B.
,
Moreau, C.
,
Bouexiere, C.
,
Romain-Latu, E.
,
Rousseau, K.
,
David, A.
,
Roux, J.L.
Published in
Microelectronics and reliability
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Methodology for accurate diagnostic of defects in III-N HEMT technologies: Non-destructive and destructive experimental tools - Electrical and T-CAD models
by
Tartarin, J.G.
,
Saugnon, D.
,
Graffeuil, J.
,
Bary, L.
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