Search Results - Sayed Ali Albahrani

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  1. 1
    ASM GaN: Industry Standard Model for GaN RF and Power Devices-Part-II: Modeling of Charge Trapping

    ASM GaN: Industry Standard Model for GaN RF and Power Devices-Part-II: Modeling of Charge Trapping by Albahrani, Sayed Ali, Mahajan, Dhawal, Hodges, Jason, Chauhan, Yogesh Singh, Khandelwal, Sourabh

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  2. 2
    Physics-Oriented Device Model for Packaged GaN Devices

    Physics-Oriented Device Model for Packaged GaN Devices by Mahajan, Dhawal Dilip, Albahrani, Sayed Ali, Sodhi, Raj, Eguchi, Takashi, Khandelwal, Sourabh

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  3. 3
    An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers

    An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers by Eslahi, Hossein, Albahrani, Sayed Ali, Mahajan, Dhawal, Khandelwal, Sourabh

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  4. 4
    Consistent Surface-Potential-Based Modeling of Drain and Gate Currents in AlGaN/GaN HEMTs

    Consistent Surface-Potential-Based Modeling of Drain and Gate Currents in AlGaN/GaN HEMTs by Albahrani, Sayed Ali, Heuken, Lars, Schwantuschke, Dirk, Gneiting, Thomas, Burghartz, Joachim N., Khandelwal, Sourabh

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  5. 5
    Extreme Temperature Modeling of AlGaN/GaN HEMTs

    Extreme Temperature Modeling of AlGaN/GaN HEMTs by Albahrani, Sayed Ali, Mahajan, Dhawal, Kargarrazi, Saleh, Schwantuschke, Dirk, Gneiting, Thomas, Senesky, Debbie G., Khandelwal, Sourabh

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  6. 6
    Circuit Model for Double-Energy-Level Trap Centers in GaN HEMTs

    Circuit Model for Double-Energy-Level Trap Centers in GaN HEMTs by Albahrani, Sayed Ali, Parker, Anthony, Heimlich, Michael

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  7. 7
    Modeling of the Impact of the Substrate Voltage on the Capacitances of GaN-on-Si HEMTs

    Modeling of the Impact of the Substrate Voltage on the Capacitances of GaN-on-Si HEMTs by Albahrani, Sayed Ali, Mahajan, Dhawal, Moench, Stefan, Reiner, Richard, Waltereit, Patrick, Schwantuschke, Dirk, Khandelwal, Sourabh

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  8. 8
    Identifying a Double-Energy-Level Trap Center in a GaN HEMT by Performing Three-Stage Pulse Measurements

    Identifying a Double-Energy-Level Trap Center in a GaN HEMT by Performing Three-Stage Pulse Measurements by Albahrani, Sayed Ali, Parker, Anthony E., Heimlich, Michael

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  9. 9
    Iso-Trapping Measurement Technique for Characterization of Self-Heating in a GaN HEMT

    Iso-Trapping Measurement Technique for Characterization of Self-Heating in a GaN HEMT by Albahrani, Sayed Ali, Parker, Anthony, Heimlich, Michael, Schwitter, Bryan

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  10. 10
    Circuit model for single-energy-level trap centers in FETs

    Circuit model for single-energy-level trap centers in FETs by Albahrani, Sayed Ali, Parker, Anthony, Heimlich, Michael

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  11. 11
    Modeling the Impact of the High-Field Region on the [Formula Omitted] Characteristics in GaN HEMTs

    Modeling the Impact of the High-Field Region on the [Formula Omitted] Characteristics in GaN HEMTs by Hodges, Jason, Sayed Ali Albahrani, Schwantuschke, Dirk, Friedbert van Raay, Bruckner, Peter, Khandelwal, Sourabh

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  12. 12
    Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT

    Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT by Hodges, Jason, Albahrani, Sayed Ali, Schwitter, Bryan, Khandelwal, Sourabh

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  13. 13
    Modeling the Impact of the High-Field Region on the C-V Characteristics in GaN HEMTs

    Modeling the Impact of the High-Field Region on the C-V Characteristics in GaN HEMTs by Hodges, Jason, Albahrani, Sayed Ali, Schwantuschke, Dirk, Raay, Friedbert van, Bruckner, Peter, Khandelwal, Sourabh

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  14. 14
    Characterization and Large-Signal Modeling of 4-Pole Backgated InGaAs HEMT

    Characterization and Large-Signal Modeling of 4-Pole Backgated InGaAs HEMT by Kunnath, Antony Abel, Albahrani, Sayed Ali, Schwantuschke, Dirk, Leuther, Arnulf

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  15. 15
    Design methodology considering evolution of statistical corners under long term degradation

    Design methodology considering evolution of statistical corners under long term degradation by Eslahi, Hossein, Mahajan, Dhawal, Albahrani, Sayed Ali, Khandelwal, Sourabh

    Published in Microelectronics
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  16. 16
    ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies

    ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies by Maurette-Blasini, Cristina, Schwantuschke, Dirk, Albahrani, Sayed Ali, Bruckner, Peter, Kuliabin, Konstantin, Chartier, Sebastien, Quay, Rudiger

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  17. 17
    Large-Signal Modeling of a 50 nm mHEMT Incorporating a Physical Impact-Ionization Model

    Large-Signal Modeling of a 50 nm mHEMT Incorporating a Physical Impact-Ionization Model by Yuce, Yasin, Albahrani, Sayed Ali, Schwantuschke, Dirk, Moulin, Maxime, Leuther, Arnulf

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  18. 18
    Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate

    Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate by Kunnath, Antony Abel, Moulin, Maxime, Albahrani, Sayed Ali, Schwantuschke, Dirk, Leuther, Arnulf

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  19. 19
    A Study of Hard Switching Characteristics of GaN-based DC-DC Boost Power Converter using ASM-GaN Compact Model

    A Study of Hard Switching Characteristics of GaN-based DC-DC Boost Power Converter using ASM-GaN Compact Model by Mahajan, Dhawal, Albahrani, Sayed Ali, Eslahi, Hossein, Khandelwal, Sourabh

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  20. 20
    Robust Circuit Model for GaN-Based Radiation-Hard Electronics

    Robust Circuit Model for GaN-Based Radiation-Hard Electronics by Mahajan, Dhawal, Albahrani, Sayed Ali, Hodges, Jason, Khandelwal, Sourabh

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