Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs by McLain, Michael L., Barnaby, Hugh J., Schlenvogt, Garrett

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Simulation of TID Effects in a High Voltage Ring Oscillator by Schlenvogt, Garrett J., Barnaby, Hugh J., Wilkinson, Jeff, Morrison, Scott, Tyler, Larry

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An Examination of High-Injection Physics of Silicon P-N Junctions With Applications in Photocurrent Modeling by Gleason, Joseph D., Barnaby, Hugh J., Alles, Michael L., Schlenvogt, Garrett J.

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Characterization and Modeling of Parasitic Field-Oxide Transistors for Use in Radiation Hardening by Design by Schlenvogt, G. J., Barnaby, H. J., Rollins, J. D., Wilkinson, J., Morrison, S., Tyler, L.

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Design strategies for ultra-low power 10 nm FinFETs by Walke, Abhijeet, Schlenvogt, Garrett, Kurinec, Santosh

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Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs by Mclain, Michael L., Barnaby, Hugh, Schlenvogt, Garrett

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Design strategies for ultra-low power 10nm FinFETs by Walke, Abhijeet, Schlenvogt, Garrett, Kurinec, Santosh

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Vertical GaN Superjunction FinFET: A Novel Device Enabling Multi-Kilovolt and Megahertz Power Switching by Xiao, Ming, Zhang, Ruizhe, Schlenvogt, Garrett, Jokinen, Thomas, Wang, Han, Zhang, Yuhao

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TCAD Model for Ag-GeSe3-Ni CBRAM Devices by Muthuseenu, Kiraneswar, Hylin, E. Carl, Barnaby, Hugh J., Apsangi, Priyanka, Kozicki, Michael N., Schlenvogt, Garrett, Townsend, Mark

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Failure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit by Schlenvogt, Garrett James, Barnaby, H J, Esqueda, I S, Holbert, K E, Wilkinson, J, Morrison, S, Tyler, L

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