Numerical modeling of magnetic-field-sensitive semiconductor devices by Andor, L., Baltes, H.P., Nathan, A., Schmidt-Weinmar, H.G.

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Theoretical calculation of the properties of two-dimensional holes in doping superlattices by Teo, K.H., Allegretto, W., McMullin, J.N., Schmidt-Weinmar, H.G.

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Modeling of a Dual-Drain NMOS Magnetic-Field Sensor by Nathan, A., Andor, L., Baltes, H.P., Schmidt-Weinmar, H.G.

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Self-consistent calculation of the density-of-states mass of holes in 2-D silicon structures by Teo, K.H., Allegretto, W., McMullin, J.N., Schmidt-Weinmar, H.G.

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Numerical modeling of silicon magnetic field sensors: Magnetoconcentration effects in split-metal-contact devices by Schmidt-Weinmar, H., Andor, L., Baltes, H., Nathan, A.

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Two-dimensional numerical analysis of a silicon magnetic field sensor by Baltes, H.P., Andor, L., Nathan, A., Schmidt-Weinmar, H.G.

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Measurement and mechanism of free carrier recombination in a silicon doping superlattice by Teo, K.H., McMullin, J.N., Weichman, F.L., Schmidt-Weinmar, H.G., Landheer, D., Denhoff, M.W.

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Bandlimiting at variance with the strong radiation condition by Baltes, H.P., Schmidt-Weinmar, H.G.

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Exchange-correlation energy in the subbands of silicon doping superlattices by Teo, K.H., McKinnon, G.H., McMullin, J.N., Schmidt-Weinmar, H.G.

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Optical absorption in silicon doping superlattices by McMullin, J.N., McKinnon, G.H., Schmidt-Weinmar, H.G., Teo, K.H.

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A Device for Point Source Simulation in a High Frequency Acoustical System by Kettlewell, J., Seguin, H.J.J., Schmidt-Weinmar, H.G.

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Bandlimiting in conflict with spatial bounding of radiative sources by Schmidt-Weinmar, H. G., Ramsay, W. B.

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