A 210-GHz fT SiGe HBT with a non-self-aligned structure by Jeng, S.J., Jagannathan, B., Rieh, J.-S., Johnson, J., Schonenberg, K.T., Greenberg, D., Stricker, A., Chen, H., Khater, M., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.

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Self-aligned SiGe NPN transistors with 285 GHz fmax and 207 GHz fT in a manufacturable technology by Jagannathan, B., Khater, M., Pagette, F., Rieh, J.-S., Angell, D., Chen, H., Florkey, J., Golan, F., Greenberg, D.R., Groves, R., Jeng, S.J., Johnson, J., Mengistu, E., Schonenberg, K.T., Schnabel, C.M., Smith, P., Stricker, A., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.

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A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure by Jeng, S.J., Jagannathan, B., Rieh, J.-S., Johnson, J., Schonenberg, K.T., Greenberg, D., Stricker, A., Chen, H., Khater, M., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.

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Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology by Jagannathan, B., Khater, M., Pagette, F., Rieh, J.-S., Angell, D., Chen, H., Florkey, J., Golan, F., Greenberg, D.R., Groves, R., Jeng, S.J., Johnson, J., Mengistu, E., Schonenberg, K.T., Schnabel, C.M., Smith, P., Stricker, A., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.

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Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs by Rieh, J.-S., Khater, M., Schonenberg, K.T., Pagette, F., Smith, P., Adam, T.N., Stein, K., Ahlgren, D., Freeman, G.

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A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications by Nguyen-Ngoc, D., Sunderland, D.A., Ahlgren, D.C., Jeng, S.J., Gilbert, M.M., Malinowski, J.C., Schonenberg, K.T., Stein, K.S., Meyerson, B.S., Harame, D.L.

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Manufacturability and applications of SiGe HBT technology by Sunderland, D.A., Ahlgren, D.C., Gilbert, M.M., Jeng, S.-J., Malinowski, J.C., Nguyen-Ngoc, D., Schonenberg, K.T., Stein, K.J., Meyerson, B.S., Harame, D.L.

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SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz by Rieh, J.-S., Greenberg, D., Khater, M., Schonenberg, K.T., Jeng, S.-J., Pagette, F., Adam, T., Chinthakindi, A., Florkey, J., Jagannathan, B., Johnson, J., Krishnasamy, R., Sanderson, D., Schnabel, C., Smith, P., Stricker, A., Sweeney, S., Vaed, K., Yanagisawa, T., Ahlgren, D., Stein, K., Freeman, G.

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CMOS gate height scaling by Zhibin Ren, Schonenberg, K.T., Ontalus, V., Lauer, I., Butt, S.A.

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Self-Consistent and Efficient Electro-Thermal Analysis for Poly/Metal Gate FinFETs by Kumar, S., Joshi, R.V., Ching-Te Chuang, Keunwoo Kim, Murthy, J.Y., Schonenberg, K.T., Nowak, E.J.

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Gate-assisted lateral PNP active load for analog SiGe HBT technology by Sunderland, D.A., Schonenberg, K.T., Stein, K.J., Meyerson, B.S., Harame, D.L., Jeng, S.-J., Nguyen-Ngoc, D., Martin, B., Eld, E.C., Tewksbury, T., Ahlgren, D.C., Gilbert, M.M., Malinowski, J.C.

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Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs by Jeng, S.J., Ahlgren, D.C., Berg, G.D., Ebersman, B., Freeman, G., Greenberg, D.R., Malinowski, J., Nguyen-Ngoc, D., Schonenberg, K.T., Stein, K.J., Colavito, D., Longstreet, M., Ronsheim, P., Subbanna, S., Harame, D.L.

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SiGe HBT technology with f/sub max//f/sub T/=350/300 GHz and gate delay below 3.3 ps by Khater, M., Rieh, J.-S., Adam, T., Chinthakindi, A., Johnson, J., Krishnasamy, R., Meghelli, M., Pagette, F., Sanderson, D., Schnabel, C., Schonenberg, K.T., Smith, P., Stein, K., Strieker, A., Jeng, S.-J., Ahlgren, D., Freeman, G.

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SiGe HBTs with cut-off frequency of 350 GHz by Rieh, J.-S., Jagannathan, B., Chen, H., Schonenberg, K.T., Angell, D., Chinthakindi, A., Florkey, J., Golan, F., Greenberg, D., Jeng, S.-J., Khater, M., Pagette, F., Schnabel, C., Smith, P., Stricker, A., Vaed, K., Volant, R., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.

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SiGe HBT Technology for High Speed Integrated Circuits by Sunderland, D.A., AhIgren, D.C., Gilbert, M.M., Jeng, S.-J., Malinowski, J.C., Nguyen-Ngoc, D., Schonenberg, K.T., Stein, K.J., Soyuer, M., Meyerson, B.S., Harame, D.L.

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A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications by Nguyen-Ngoc, D., Harame, D.L., Malinowski, J.C., Jeng, S.J., Schonenberg, K.T., Gilbert, M.M., Berg, G.D., Wu, S., Soyuer, M., Tallman, K.A., Stein, K.J., Groves, R.A., Subbanna, S., Colavito, D.B., Sunderland, D.A., Meyerson, B.S.

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