Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies by Neininger, P., Mikulla, M., Döring, P., Dammann, M., Thome, F., Krause, S., Schwantuschke, D., Brückner, P., Friesicke, C., Quay, R.

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Fan-out Wafer Level Packaging of GaN Traveling Wafer Amplifier by Schwantuschke, D., Ture, E., Braun, T., Nguyen, T.D., Wohrmann, M., Pretl, M., Engels, S.

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Dual-Gate GaN MMICs for MM-Wave Operation by Quay, R, Tessmann, A, Kiefer, R, Maroldt, S, Haupt, C, Nowotny, U, Weber, R, Massler, H, Schwantuschke, D, Seelmann-Eggebert, M, Leuther, A, Mikulla, M, Ambacher, O

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A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology by Kallfass, I., Quay, R., Massler, H., Wagner, S., Schwantuschke, D., Haupt, C., Kiefer, R., Ambacher, O.

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New Low-Frequency Dispersion Model for AlGaN/GaN HEMTs Using Integral Transform and State Description by van Raay, F., Quay, R., Seelmann-Eggebert, M., Schwantuschke, D., Peschel, D., Schlechtweg, M., Ambacher, O.

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Deep Submicron III-N HEMTs - Technological Development and Reliability by Quay, R., Dammann, M., Kemmer, T., Bruckner, P., Cwiklinski, M., Schwantuschke, D., Krause, S., Leone, S., Mikulla, M.

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A scalable compact small-signal mHEMT model accounting for distributed effects in sub-millimeter wave and terahertz applications by Ohlrogge, M., Seelmann-Eggebert, M., Leuther, A., Massler, H., Tessmann, A., Weber, R., Schwantuschke, D., Schlechtweg, M., Ambacher, O.

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Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests by Dammann, M., Baeumler, M., Anto, R., Konstanzer, H., Bruckner, P., Polyakov, V., Wespel, M., Muller, S., Schwantuschke, D., Maroldt, S., Quay, R., Mikulla, M., Ambacher, O.

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AlGaN/GaN-based variable gain amplifiers for W-band operation by Diebold, S., Muller, D., Schwantuschke, D., Wagner, S., Quay, R., Zwick, T., Kallfass, I.

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A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology by Kallfass, I., Quay, R., Massler, H., Wagner, S., Schwantuschke, D., Haupt, C., Kiefer, R., Ambacher, O.

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A 67 GHz GaN Voltage-Controlled Oscillator MMIC With High Output Power by Weber, R., Schwantuschke, D., Bruckner, P., Quay, R., Mikulla, M., Ambacher, O., Kallfass, I.

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A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs by Schwantuschke, D., Seelmann-Eggebert, M., Bruckner, P., Quay, R., Mikulla, M., Ambacher, O., Kallfass, I.

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A 65 - 100 GHz impedance transforming hybrid coupler for a V- /W-band AlGaN/GaN MMIC by Pahl, P., Diebold, S., Schwantuschke, D., Wagner, S., Lozar, R., Quay, R., Kallfass, I., Zwick, T.

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A 65 - 100 GHz impedance transforming hybrid coupler for a V-/W-band AlGaN/GaN MMIC by Pahl, P., Diebold, S., Schwantuschke, D., Wagner, S., Lozar, R., Quay, R., Kallfass, I., Zwick, T.

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A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology by Schwantuschke, D., Bruckner, P., Quay, R., Mikulla, M., Ambacher, O., Kallfass, I.

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GaN-based millimeter-wave monolithic integrated circuits by Schwantuschke, D., Kallfass, I., Quay, R., Ambacher, O.

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A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology by Schwantuschke, D., Bruckner, P., Quay, R., Mikulla, M., Ambacher, O., Kallfass, I.

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A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology by Kallfass, I., Massler, H., Wagner, S., Schwantuschke, D., Bruckner, P., Haupt, C., Kiefer, R., Quay, R., Ambacher, O.

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W-band power amplifier MMIC with 400 mW output power in 0.1 µm AlGaN/GaN technology by van Heijningen, M., Rodenburg, M., van Vliet, F. E., Massler, H., Tessmann, A., Bruckner, P., Muller, S., Schwantuschke, D., Quay, R., Narhi, T.

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